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SSM6N815R Silicon N-Channel MOSFET

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Description

MOSFETs Silicon N-Channel MOS SSM6N815R 1.Applications * Power Management Switches 2..

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Features

* (1) 4.0 V drive (2) Low drain-source on-resistance : RDS(ON) = 115 mΩ (typ. ) (@VGS = 4.0 V) RDS(ON) = 101 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 84 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment TSOP6F SSM6N815R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017 Toshiba E

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