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TK10E80W - N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK10E80W
Manufacturer	Toshiba
File Size	420.73 KB
Description	N-Channel MOSFET
Datasheet	TK10E80W-Toshiba.pdf

TK10E80W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK10E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power.

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Published: Oct 4, 2020 |