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TK10E80W Datasheet - Toshiba

N-Channel MOSFET

TK10E80W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK10E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4.

TK10E80W Datasheet (420.73 KB)

Preview of TK10E80W PDF

Datasheet Details

Part number:

TK10E80W

Manufacturer:

Toshiba ↗

File Size:

420.73 KB

Description:

N-channel mosfet.

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TK10E80W N-Channel MOSFET Toshiba

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