Datasheet4U Logo Datasheet4U.com

TK10E80W Datasheet - Toshiba

TK10E80W N-Channel MOSFET

TK10E80W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK10E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4.

TK10E80W Datasheet (420.73 KB)

Preview of TK10E80W PDF
TK10E80W Datasheet Preview Page 2 TK10E80W Datasheet Preview Page 3

Datasheet Details

Part number:

TK10E80W

Manufacturer:

Toshiba ↗

File Size:

420.73 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TK10E80W N-Channel MOSFET (INCHANGE)

TK10E60W Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK10E60W N-Channel MOSFET (INCHANGE)

TK100A06N1 MOSFETs (Toshiba Semiconductor)

TK100A06N1 N-Channel MOSFET (INCHANGE)

TK100A08N1 MOSFETs (Toshiba Semiconductor)

TK100A10N1 Silicon N-Channel MOSFET (Toshiba)

TK100A10N1 N-Channel MOSFET (INCHANGE)

TK100E06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK100E06N1 N-Channel MOSFET (INCHANGE)

TAGS

TK10E80W N-Channel MOSFET Toshiba

TK10E80W Distributor