TK10E80W Datasheet - Toshiba

TK10E80W, N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK10E80W 1.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK10E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4.

TK10E80W-Toshiba.pdf