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TK10P50W Datasheet - Toshiba

TK10P50W N-Channel MOSFET

TK10P50W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10P50W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4.

TK10P50W Datasheet (275.07 KB)

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Datasheet Details

Part number:

TK10P50W

Manufacturer:

Toshiba ↗

File Size:

275.07 KB

Description:

N-channel mosfet.

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TK10P50W N-Channel MOSFET Toshiba

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