TK20P04M1 - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Low gate charge: QSW = 3.7 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK20P04M1 DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2010-01 2016-03-16 Rev.4.0 TK20P04M1 4. Absolute Maximum Ratings (Note) (Ta = 25 un.

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Published: Jan 2, 2024 |