TK20X60U Datasheet - Toshiba

TK20X60U, Field Effect Transistor

TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK20X60U Switching Regulator Applications * * * .

TK20X60U_Toshiba.pdf

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Datasheet Details

Part number:

TK20X60U

Manufacturer:

Toshiba ↗

File Size:

212.56 KB

Description:

Field Effect Transistor

Features

* hout limitation, equipment used in nuclear facilities, equipment used

Applications

* Low drain-source ON resistance: RDS (ON) = 0.175 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

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TK20X60U Field Effect Transistor Toshiba

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