TK2K2A60F - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 1.82 Ω (typ. ) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK2K2A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-puls.

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Published: Jan 2, 2024 |