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TK2P90E

N-Channel MOSFET

TK2P90E Features

* (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK2P90E 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings

TK2P90E Datasheet (326.05 KB)

Preview of TK2P90E PDF

Datasheet Details

Part number:

TK2P90E

Manufacturer:

Toshiba ↗

File Size:

326.05 KB

Description:

N-channel mosfet.

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TAGS

TK2P90E N-Channel MOSFET Toshiba

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