TK2P90E Datasheet - Toshiba

TK2P90E, N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (π-MOS) TK2P90E 1.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.
) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK2P90E 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings

TK2P90E-Toshiba.pdf