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1SS322 - Silicon Epitaxial Schottky Barrier Type Diode

1SS322 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching * Low forward voltage * Low reverse current

1SS322 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS322-like datasheet

1SS322 Stock/Price