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2SC6076 Silicon NPN Transistor

2SC6076 Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low c.

2SC6076 Applications

* Power Switching Applications 2SC6076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emit

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Silicon NPN Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SC6076-like datasheet