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2SK3562 - N-Channel MOSFET

2SK3562 Description

2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications * Low drain-source ON-r.

2SK3562 Applications

* Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ. )
* High forward transfer admittance: |Yfs| = 5.0 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

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N-Channel MOSFET Toshiba Semiconductor
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