Datasheet4U Logo Datasheet4U.com

TK1P90A Silicon N-Channel MOSFET

TK1P90A Description

TK1P90A MOSFETs Silicon N-Channel MOS (π-MOS) TK1P90A 1.Applications * Switching Voltage Regulators 2..

TK1P90A Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ. ) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (

📥 Download Datasheet

Preview of TK1P90A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TK100A10N1 - Silicon N-Channel MOSFET (Toshiba)
  • TK100F04K3 - Silicon N-Channel MOSFET (Toshiba)
  • TK100F06K3 - Silicon N-Channel MOSFET (Toshiba)
  • TK100L60W - Silicon N-Channel MOSFET (Toshiba)
  • TK10415 - CERAMIC SPEAKER DRIVE AMPLIFIER (TOKO)
  • TK10416 - DYNAMIC SPEAKER DRIVE AMPLIFIER (TOKO)
  • TK10417 - POWER AMPLIFIER (TOKO)
  • TK10420 - Dual Conversion FM IF Amplifier (Toko America)

📌 All Tags

Silicon N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor TK1P90A-like datasheet