Datasheet Details
- Part number
- VBT4045BP-E3
- Manufacturer
- Vishay ↗
- File Size
- 97.84 KB
- Datasheet
- VBT4045BP-E3-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
VBT4045BP-E3 Description
www.vishay.com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0..
VBT4045BP-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
* Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912
VBT4045BP-E3 Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade
Terminals: Matte tin plated leads, solder
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