* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct
VBT4060C Datasheet (137.83 KB)
VBT4060C
137.83 KB
Dual trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 .
📁 Related Datasheet
VBT4045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VBT4045BP-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT4045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT4045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT4045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
