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PBSS4260PANP 2A NPN/PNP low VCEsat (BISS) transistor

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Description

PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1.General .
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

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Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High efficiency due to less heat generation
* AEC-Q1

Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor; for the PNP transistor with negative pola

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