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WNM4006 - N-Channel MOSFET

Description

The WNM4006 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 W46.
  • = Device Code = Month (A~Z) W46.

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Datasheet Details

Part number WNM4006
Manufacturer TY Semiconductor
File Size 96.26 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM4006 Datasheet
Additional preview pages of the WNM4006 datasheet.

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Full PDF Text Transcription

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Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.126@ VGS=10V 45 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 D 3 Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4006 is Pb-free. 1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 W46 * = Device Code = Month (A~Z) W46* Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc.
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