0.55-Inch Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=70-140 @IC = 4A ·Collector-Emitter Saturation Voltag

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 55N10 DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Volt

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f

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isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volta

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isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Re

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- :

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-1

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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isc Silicon PNP Power Transistor MJE2955T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-

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isc Thyristors BCA55 DESCRIPTION Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard

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isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-10

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK555-100A/B DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·Mini

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Isc N-Channel MOSFET Transistor PHD55N03 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100

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INCHANGE Semiconductor isc Silicon PNP Transistor isc RF Product Specification BC556/BC557/BC558 DESCRIPTION ·High Voltage ·Complement to Type BC546

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