UNISONIC TECHNOLOGIES CO., LTD 12N10 12A, 100V N-C.
Fairchild Semiconductor
F12N10L - N-Channel Logic Level Power MOSFET
Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie.
Unisonic Technologies
12N10 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 12N10 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advan.
Cmos
CMD12N10 - 100V N-Channel MOSFET
CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl.
AGMSEMI
AGM12N10AP - MOSFET
AGM12N10AP ● General Description The AGM12N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
AGMSEMI
AGM12N10A - MOSFET
AGM12N10A ● General Description The AGM12N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
AGMSEMI
AGM12N10D - MOSFET
AGM12N10D ● General Description The AGM12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(.
AGMSEMI
AGMH12N10D - MOSFET
AGMH12N10D ● General Description The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
AGMSEMI
AGMH12N10C - MOSFET
AGMH12N10C ● General Description The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
Excelliance MOS
EMB12N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 68A G UIS, Rg 100% Tested .
Excelliance MOS
EMD12N10E - MOSFET
EMD12N10E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 11.5mΩ ID 95A G UIS, Rg.
Excelliance MOS
EMB12N10G - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 12A G UIS, Rg .
Excelliance MOS
EMD12N10H - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 50A G UIS, Rg 100% Tested .
Excelliance MOS
EMB12N10VS - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 32A G UIS, Rg .
CHONGQING PINGYANG
12N10P - N-CHANNEL MOSFET
12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE 12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A Low gate charge Low Ciss Fast switching 100% ava.
Cmos
CMU12N10 - 100V N-Channel MOSFET
CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl.
Cystech Electonics
MTB012N10RQ8 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB012N10RQ8 Spec. No. : C056Q8 Issued Date : 2016.08.26 Revised Date : 2016.11.08 .
IXYS
IXFT12N100 - Power MOSFETs
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT10N100 IXFT12N100 IXFT13N100 V DSS I D25 1000 V 10 A .
SeCoS
SPR12N10 - N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente SPR12N10 12A , 100V , RDS(ON) 112 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” speci.
