12N10 Datasheet | Specifications & PDF Download

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www.DataSheet4U.com IGBT Combi Pack Preliminary Data Sheet VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V IC25 24 A 24 A VCE(sat) 3.5 V 4

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12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE  12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% ava

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MOSFET – Power, Single N-Channel 100 V, 14.4 mW, 45 A NTTFS012N10MD Features • Shielded Gate MOSFET Technology • Low RDS(on) to Minimize Conduction L

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Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 IXGH 12N100A VCES 1000 V 1000 V I V C25 CE(sat) 24 A 3.5 V 24 A 4.0 V Symbol Test Conditions VCE

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Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 IXGH 12N100A VCES 1000 V 1000 V I V C25 CE(sat) 24 A 3.5 V 24 A 4.0 V Symbol Test Conditions VCE

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EMD12N10E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 11.5mΩ ID 95A G UIS, Rg

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 50A G UIS, Rg 100% Tested

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CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions

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STL12N10F7 Datasheet N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Fea

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® STD12N10L N - CHANNEL 100V - 0.12 Ω - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD12N10L s s s s s s s V DSS 100 V R DS(o n) < 0.15 Ω

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HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.05 Ω 1.20 Ω 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching

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Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100

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Multilayer Ceramic Chip Capacitors Products – NPO, X7R, Y5V HOW TO ORDER 0603 N 101 J 500 N T Packaging Code T = 7” reel/paper tape Termination N = Ag

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell de

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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www.DataSheet.co.kr IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate drive

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