PHD12N10E (NXP)
Transistor
Philips Semiconductors
Product Specification
PowerMOS transistor
PHD12N10E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power trans
(31 views)
IXGP12N100 (IXYS Corporation)
IGBT
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IGBT
VCES
IC25 24 A 24 A
VCE(sat) 3.5 V 4.0 V
IXGA/IXGP12N100 1000 V IXGA/IXGP12N100A 1000 V
Preliminary Data Sheet
Symbol
(28 views)
F12N10L (Fairchild Semiconductor)
N-Channel Logic Level Power MOSFET
Data Sheet
RFP12N10L
October 2013
N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ
These are N-Channel enhancement mode silicon gate power fie
(28 views)
PHP12N10E (NXP)
PowerMOS transistor
Philips Semiconductors
Product Specification
PowerMOS transistor
PHP12N10E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power trans
(27 views)
CED12N10 (CET)
N-Channel MOSFET
CED12N10/CEU12N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for
(26 views)
CMD12N10 (Cmos)
100V N-Channel MOSFET
CMD12N10 / CMU12N10
100V N-Channel MOSFET
General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl
(25 views)
IXFV12N100PS (IXYS Corporation)
Polar HiPerFET Power MOSFETs
PolarTM HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH12N100P IXFV12N100P IXFV12N100PS
VDSS ID25
(24 views)
NTTFS012N10MD (ON Semiconductor)
N-Channel Power MOSFET
MOSFET – Power, Single N-Channel
100 V, 14.4 mW, 45 A
NTTFS012N10MD
Features
• Shielded Gate MOSFET Technology • Low RDS(on) to Minimize Conduction L
(24 views)
MTB012N10RQ8 (Cystech Electonics)
N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB012N10RQ8
Spec. No. : C056Q8 Issued Date : 2016.08.26 Revised Date : 2016.11.08
(23 views)
IXGA12N100 (IXYS Corporation)
IGBT
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IGBT
VCES
IC25 24 A 24 A
VCE(sat) 3.5 V 4.0 V
IXGA/IXGP12N100 1000 V IXGA/IXGP12N100A 1000 V
Preliminary Data Sheet
Symbol
(23 views)
AGMH12N10C (AGMSEMI)
MOSFET
AGMH12N10C
● General Description
The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS
(23 views)
MTM12N10 (Motorola)
POWER FIELD EFFECT TRANSISTOR
(22 views)
IXGP12N100A (IXYS Corporation)
IGBT
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IGBT
VCES
IC25 24 A 24 A
VCE(sat) 3.5 V 4.0 V
IXGA/IXGP12N100 1000 V IXGA/IXGP12N100A 1000 V
Preliminary Data Sheet
Symbol
(22 views)
IXGA12N100U1 (IXYS Corporation)
IGBT
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IGBT
Combi Pack
Preliminary Data Sheet
VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V
IC25 24 A 24 A
VCE(sat) 3.5 V 4
(22 views)
IXFH12N100F (IXYS Corporation)
Power MOSFET
Advance Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic
(21 views)
IXGA12N100AU1 (IXYS Corporation)
IGBT
www.DataSheet4U.com
IGBT
Combi Pack
Preliminary Data Sheet
VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V
IC25 24 A 24 A
VCE(sat) 3.5 V 4
(21 views)
IXGP12N100AU1 (IXYS Corporation)
IGBT
www.DataSheet4U.com
IGBT
Combi Pack
Preliminary Data Sheet
VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V
IC25 24 A 24 A
VCE(sat) 3.5 V 4
(21 views)
IXFH12N100 (IXYS Corporation)
Power MOSFET
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
(20 views)
IXFR12N100F (IXYS Corporation)
HiPerFET Power MOSFETs
HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM
VDSS
ID25
RDS(on) 1.05 Ω 1.20 Ω
12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching
(20 views)
IXFV12N100P (IXYS Corporation)
Polar HiPerFET Power MOSFETs
PolarTM HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH12N100P IXFV12N100P IXFV12N100PS
VDSS ID25
(20 views)
