12N10 Datasheet | Specifications & PDF Download

Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 IXGH 12N100A VCES 1000 V 1000 V I V C25 CE(sat) 24 A 3.5 V 24 A 4.0 V Symbol Test Conditions VCE

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Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 IXGH 12N100A VCES 1000 V 1000 V I V C25 CE(sat) 24 A 3.5 V 24 A 4.0 V Symbol Test Conditions VCE

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LinearTM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTH12N100L VDSS = ID25 = ≤ RDS(on) 1000V 12A 1.3Ω Symbol VDSS

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Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

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UNISONIC TECHNOLOGIES CO., LTD 12N10 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advan

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12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE  12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% ava

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CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl

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Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

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HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.05 Ω 1.20 Ω 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching

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www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem

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Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100

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PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 50A G UIS, Rg 100% Tested

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions

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www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem

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www.DataSheet4U.com IGBT Combi Pack Preliminary Data Sheet VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V IC25 24 A 24 A VCE(sat) 3.5 V 4

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 32A G UIS, Rg 100% Tested

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions

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CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl

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