13NM60 Datasheet | Specifications & PDF Download

STF13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_no

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UNISONIC TECHNOLOGIES CO., LTD 13NM60 13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and

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STF13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_no

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STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IP

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STF13NM60N-H N-channel 600 V, 0.28 Ω , 11 A MDmesh™ II Power MOSFET in TO-220FP Features Type STF13NM60N-H ■ ■ ■ VDSS (@Tjmax) 650 V RDS(on) max < 0

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STP13NM60ND Datasheet N-channel 600 V, 325 mΩ typ., 11 A FDmesh II Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order cod

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STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS RDS(on) (@Tjm

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF13NM60N ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100%

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Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanch

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor STP13NM60ND ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min)

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STL13NM60N N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 3 6

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Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.28Ω ·Low gate input resistance ·100% avalanche tested ·Low input capacitance and gate cha

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Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages Datasheet — production data Features T

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STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages Datasheet — production data Features T

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STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IP

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanch

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STF13NM60ND Datasheet N-channel 600 V, 325 mΩ typ., 11 A FDmesh II Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_n

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STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK

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