.
Inchange Semiconductor
2SA1943 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-.
Inchange Semiconductor
D1918 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementar.
INCHANGE
TT2190 - NPN Transistor
isc Silicon NPN Power Transistor TT2190 DESCRIPTION ·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : V.
INCHANGE
2SC5198 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to T.
Inchange Semiconductor
D1980 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1980 DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor betwe.
INCHANGE
C1969 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W.
Inchange Semiconductor
2SK1940 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L.
INCHANGE
IRFB4019 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRFB4019，IIRFB4019 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤95mΩ ·Enhancement mode ·Fast Switching Spe.
INCHANGE
ET190 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 8A ·High reliability ·High D.C current gai.
INCHANGE
TTA1943 - PNP Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor TTA1943 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Compl.
INCHANGE
19N20 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :.
INCHANGE
2SC1904 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1904 DESCRIPTION ·Low collector to emitter saturation voltage ·Output of 1W can be obtain.
INCHANGE
IPP60R190P6 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPP60R190P6，IIPP60R190P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.
Inchange Semiconductor
2SK1937 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L.
Inchange Semiconductor
2SC1970 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1970 DESCRIPTION ·High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Relia.
INCHANGE
2SC1969 - Silicon NPN Power Transistor
isc Silicon NPN RF Power Transistor INCHANGE Semiconductor 2SC1969 DESCRIPTION ·With TO-220 packaging ·Reliable performance at higher powers ·Accura.
INCHANGE
2SA1931 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to T.
Inchange Semiconductor
2SC3198 - Silicon NPN Power Transistor
isc Silicon NPN Transistor DESCRIPTION ·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·.
Inchange Semiconductor
K1938 - 2SK1938
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1938 DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Vo.
INCHANGE
2SC3519 - NPN Transistor
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity .