19-inch Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementar

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isc Silicon NPN Power Transistor TT2190 DESCRIPTION ·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : V

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1904 DESCRIPTION ·Low collector to emitter saturation voltage ·Output of 1W can be obtain

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Fast Switching Speed ·Minimum Lot

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Silicon NPN Power Transistor MJ21194 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Sa

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switch

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isc Silicon NPN Transistor DESCRIPTION ·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)C

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INCHANGE Semiconductor  Product Specification  isc Silicon PNP Power Transistor  2SA1964  DESCRIPTION  ·Collector­Emitter Breakdown Voltage­  : V(

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13.5 dB TYP. @V

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isc N-Channel MOSFET Transistor IRFB4019，IIRFB4019 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤95mΩ ·Enhancement mode ·Fast Switching Spe

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isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche test

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