19-inch Datasheet | Specifications & PDF Download

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isc Silicon NPN Power Transistor TT2190 DESCRIPTION ·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : V

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementar

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-

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isc N-Channel MOSFET Transistor FCPF190N60 ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate d

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isc N-Channel MOSFET Transistor IRFB4019，IIRFB4019 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤95mΩ ·Enhancement mode ·Fast Switching Spe

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L

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isc Silicon PNP Power Transistor INCHANGE Semiconductor TTA1943 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Compl

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1904 DESCRIPTION ·Low collector to emitter saturation voltage ·Output of 1W can be obtain

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isc Silicon NPN Power Transistor isc Product Specification 2SD198 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Exce

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isc Silicon PNP Power Transistor NJW21193G DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum L

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INCHANGE Semiconductor  Product Specification  isc Silicon PNP Power Transistor  2SA1964  DESCRIPTION  ·Collector­Emitter Breakdown Voltage­  : V(

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1980 DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor betwe

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isc Silicon NPN Transistor DESCRIPTION ·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)C

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isc Silicon NPN Transistor DESCRIPTION ·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·

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isc N-Channel MOSFET Transistor IPP60R190P6，IIPP60R190P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 2A ·High Collector Power Dissipation- : PC= 25W(Max)

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