19-inch Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementar

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isc Silicon NPN Power Transistor TT2190 DESCRIPTION ·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : V

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isc N-Channel MOSFET Transistor 2SK4191LS FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On

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www.DataSheet.co.kr 19” CDT Color Monitor IC801 NT6812 1 2 3 4 5 6 7 8 9 10 11 12 VBLK CAP_A VDD_1 GND_A B_IN R_IN G_IN GND-PLL VCO 5V_PLL SDA SCL H

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W

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isc N-Channel MOSFET Transistor 2SK4197LS FEATURES ·Drain Current : ID= 3.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On

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isc Silicon NPN Darlington Power Transistor 2SD1933 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- :

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Swit

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MT9M019: 1/5-Inch 1.3Mp CMOS Digital Image Sensor Features www.DataSheet4U.com 1/5-Inch 1.3Mp CMOS Digital Image Sensor MT9M019 Data Sheet For the la

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isc Silicon PNP Power Transistor NJW21193G DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum L

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www.DataSheet4U.com CHINA SEMICONDUCTOR CORPORATION Spec. No. Rev. PS-ND-0711 A PRODUCT SPECIFICATION Model No CSS-1018T9/1019T9 Descriptions: 1.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMF65R190P ·FEATURES ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche

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Silicon NPN Power Transistor MJ21194 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Sa

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isc N-Channel MOSFET Transistor 2SK4195LS FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On

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isc N-Channel MOSFET Transistor 2SK4198LS FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L

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www.DataSheet4U.com CHINA SEMICONDUCTOR CORPORATION Spec. No. Rev. PS-ND-0711 A PRODUCT SPECIFICATION Model No CSS-1018E/1019E Descriptions: 1.0

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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