20N10 Datasheet | Specifications & PDF Download

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM3 Power-Transistor, 100 V IPT020N10N3 Data Sheet Rev. 2.0 Final Power Mana

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N-Channel 100-V (D-S) MOSFET FQD20N10 PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 100 0.075 at VGS = 10 V ID (A)a 20 Qg (Typ) 31 nC TO-252 FEATURES •

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STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI s s s s s s s s s V DSS 100 V 100 V

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UNISONIC TECHNOLOGIES CO., LTD USG120N10 Preliminary 120A, 100V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC USG120N10 is a N-channe

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N N-CHANNEL MOSFET JCS120N10I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns-=m1a0xV） Qg-typ 120A 100V 6.5mΩ 133nC  DC/DC   

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D20N10E FEATURE 20 Amps, 95Volts N-CHANNEL Power MOSFET DFN5*6  20A,95V,RDS(ON)MAX=7mΩVGS=10V/5A  Low gate charge  Low Ciss  Fast switching  1

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STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N10 s s s s s s s s V DSS 100 V R DS( on) < 0.12 Ω ID 20 A TYPICAL RDS(on) =

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IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 IC

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IPB020N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • N-channel, normal level • Optimized for FOMOSS • Very low on-resistance RDS(on) • 175

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Analog Power N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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HGS220N10SL Feature ◇ High Speed Power Switching, Logic Level. ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Teste

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-

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TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D

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isc N-Channel MOSFET Transistor FDB120N10 FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-

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IQD020N10NM5CG MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resi

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Silicon N-Channel Power MOSFET ○R CS120N10 A0 General Description： CS120N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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FDP120N10 — N-Channel PowerTrench® MOSFET FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November 2013 Features • RDS(on) = 9.7 mΩ (Typ

Rating: 1 ★ (3 votes)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N10 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltag

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HRP120N10K HRP120N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Cha

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STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI s s s s s s s s s V DSS 100 V 100 V

Rating: 1 ★ (3 votes)