20N10 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N10 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltag

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IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 IC

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Silicon N-Channel Power MOSFET ○R CS120N10 A8 General Description： CS120N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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SLP120N10G SLP120N10G 100V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET techno

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AP120N10D 100V N-Channel Enhancement Mode MOSFET Description The AP120N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate c

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HRLP120N10H Dec 2016 HRLP120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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SFPS(BFP)1(B2)01N2100N0100B SGT N-MOSFET100V, 120A, 4.0mΩ Features  Uses advanced SGT MOSFET technology  Extremely low on-resistance RDS(on)  High

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IPB020N10N5LF MOSFET OptiMOSTM 5 Linear FET, 100 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf

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Silicon N-Channel Power MOSFET ○R CS120N10 AR General Description： CS120N10 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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Isc N-Channel MOSFET Transistor IPB020N10N5LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc

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GOFORD Description The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching perfor

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JMTG320N10A Description JMT N-channel Enhancement Mode Power MOSFET Features  100V, 28A RDS(ON) <30mΩ @ VGS = 10V RDS(ON) <33.8mΩ @ VGS = 4.5V  A

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IPB020N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • N-channel, normal level • Optimized for FOMOSS • Very low on-resistance RDS(on) • 175

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to

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FDP120N10 — N-Channel PowerTrench® MOSFET FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November 2013 Features • RDS(on) = 9.7 mΩ (Typ

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STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI s s s s s s s s s V DSS 100 V 100 V

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IQD020N10NM5CG MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resi

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N N-CHANNEL MOSFET JCS120N10I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns-=m1a0xV） Qg-typ 120A 100V 6.5mΩ 133nC  DC/DC   

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JMTG320N10A Description JMT N-channel Enhancement Mode Power MOSFET Features  100V, 28A RDS(ON) <30mΩ @ VGS = 10V RDS(ON) <33.8mΩ @ VGS = 4.5V  A

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HRP120N10K HRP120N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Cha

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