20N10 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET ○R CS120N10 A8 General Description： CS120N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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CYStek Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE020N10RF3 Spec. No. : C745F3 Issued Date : 2017.10.26 Revised Date : 2024.07.03 P

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N10 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltag

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IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 IC

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Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK420N10T I

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GOFORD Description The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching perfor

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Silicon N-Channel Power MOSFET ○R CS120N10 A0 General Description： CS120N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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() Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • AEC-Q101 Qualified

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HRLP120N10H Dec 2016 HRLP120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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Silicon N-Channel Power MOSFET ○R CS120N10 AR General Description： CS120N10 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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HRLO120N10H Jan 2016 HRLO120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variati

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SFPS(BFP)1(B2)01N2100N0100B SGT N-MOSFET100V, 120A, 4.0mΩ Features  Uses advanced SGT MOSFET technology  Extremely low on-resistance RDS(on)  High

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T

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IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 IC

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MSD20N10 N-Channel 100-V (D-S) MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combinatio

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to

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