20N10 Datasheet | Specifications & PDF Download

() Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • AEC-Q101 Qualified

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Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK420N10T I

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GOFORD Description The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching perfor

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IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 IC

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T

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HMS120N10, HMS120N10D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely opti

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JMTG320N10A Description JMT N-channel Enhancement Mode Power MOSFET Features  100V, 28A RDS(ON) <30mΩ @ VGS = 10V RDS(ON) <33.8mΩ @ VGS = 4.5V  A

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VBZE20N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.110 at VGS = 10 V ID (A) 15 TO-252 D G FEAT

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ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9.

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N-Channel 100 V (D-S) MOSFET DTU20N10 www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.066 at VGS = 10 V 0.080 at VGS = 4.5 V ID (A)

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HGS220N10SL Feature ◇ High Speed Power Switching, Logic Level. ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Teste

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max)@VGS=10V

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Silicon N-Channel Power MOSFET ○R CS120N10 A0 General Description： CS120N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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Silicon N-Channel Power MOSFET ○R CS120N10 AR General Description： CS120N10 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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Silicon N-Channel Power MOSFET ○R CS120N10 A8 General Description： CS120N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 IC

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D20N10E FEATURE 20 Amps, 95Volts N-CHANNEL Power MOSFET DFN5*6  20A,95V,RDS(ON)MAX=7mΩVGS=10V/5A  Low gate charge  Low Ciss  Fast switching  1

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