2N60B Datasheet | Specifications & PDF Download

www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mo

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HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS

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GenX3TM 600V IGBT w/ Diode Medium Speed Low Vsat PT IGBTs 5-40 kHz Switching IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE(sat) tfi(typ) = 600V = 72A

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HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25

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MDF2N60B N-channel MOSFET 600V MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5Ω General Description These N-channel MOSFET are produced using advanced Mag

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CYStech Electronics Corp. Spec. No. : C164FP Issued Date : 2015.03.04 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN12N60

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2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avala

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www.DataSheet4U.com HiPerFASTTM IGBT IXGA 12N60B IXGP 12N60B VCES IC25 VCE(sat) tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data sheet

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www.DataSheet.co.kr GenX3TM B3-Class IGBTs Medium Speed low Vsat PT IGBTs 5-40 kHz Switching IXGH72N60B3 IXGT72N60B3 VCES IC110 VCE(sat) tfi(typ)

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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This fam

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12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava

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www.DataSheet4U.com HiPerFASTTM IGBT IXGA 12N60B IXGP 12N60B VCES IC25 VCE(sat) tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data sheet

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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This fam

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HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25

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N Channel MOSFET www.DataSheet4U.com 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Dr

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GenX3TM 600V IGBT w/ Diode Medium Speed Low Vsat PT IGBTs 5-40 kHz Switching IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE(sat) tfi(typ) = 600V = 72A

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HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs This family of MOS gated high voltage switching devices combine the best fea

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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 File Number 4411.2 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperf

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www.DataSheet4U.com HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE(sat) tfi(typ) Preliminary data = 600 V = 24 A = 2.1 V = 120 ns Symbol VCES VCGR

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