2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germaniu.
Rectron
38
2N7002 - N-Channel Enhancement Mode Power MOSFET
2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.
WEITRON
31
2N7002KDW - Dual N-Channel MOSFET
Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES.
KEC
31
2N7000 - N-Channel MOSFET
SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal s.
ON Semiconductor
31
2N7008 - Small-Signal Field Effect Transistor
2N7008 Small−Signal Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS …are designed for high voltage, high speed applications such.
ON Semiconductor
30
2N7000G - Small Signal MOSFET
2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS.
Yangzhou Yangjie
28
2N7002KCE - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCE RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at .
NXP
28
2N7002T - N-channel TrenchMOS FET
2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode .
Yangzhou Yangjie
27
2N7002KCWQ - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.5.
Yangzhou Yangjie
27
2N7002KCW - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at .
Yangzhou Yangjie
26
2N7002KDW - N-Channel Enhancement Mode Field Effect Transistor
2N7002KDW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) ＜2.5o.
nexperia
25
2N7002HS - dual N-channel Trench MOSFET
2N7002HS 60 V, dual N-channel Trench MOSFET 15 December 2021 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect .
MCC
24
2N7002KV - Dual N-Channel MOSFET
1.9 Features +LJK'HQVLW\&HOO'HVLJQIRU/RZ5'6 21 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK (SR[\0HHWV8/ 9)ODPPDELOLW\5DWLQJ 0.
Matsuki
20
ME2N7002DKW-G - Dual N-Channel MOSFET
kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan.
INCHANGE
20
2N7000 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input r.
UTC
19
2N7000 - N-Channel MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N7000 N-CHANNEL ENHANCEMENT MODE Power MOSFET DESCRIPTION The UTC 2N7000 has been designed to minimize on-state re.
Matsuki
19
ME2N7002E - N-Channel MOSFET
N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO.
Silikron Semiconductor
18
2N7002KB - MOSFET
Main Product Characteristics: VDSS RDS(on) 60V 2Ω(max.) ID 0.3A SOT-23 Features and Benefits: Advanced MOSFET process technology Special des.
Yangzhou Yangjie
18
2N7002KCDWQ - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2..
Motorola Inc
17
2N7002LT1 - TMOS FET Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motoro.
Kexin
17
2N7002K - N-channel MOSFET
SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc.