36-Channel Datasheet | Specifications & PDF Download

Preliminary RT3624BE Dual Channel PWM Controller for IMVP9.1 CPU Core Power Supply General Description The RT3624BE is a synchronous buck controlle

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MMP60R360P Datasheet MMP60R360P 600V 0.36Ω N-channel MOSFET  Description MMP60R360P is power MOSFET using magnachip’s advanced super junction techno

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S8MBG036 60V N+P Dual Channel MOSFETs General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DM

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MOSFET – N-Channel, POWERTRENCH) 80 V, 240 A, 2.0 mW FDBL86363-F085 Features  Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A  Typical Qg(tot) =

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SCX70R360C6 700V N-Channel Super Junction Power MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. Th

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MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367-F085 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 6

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MOSFET – POWERTRENCH) N-Channel 80 V, 220 A, 3.0 mW FDBL86366-F085 Features • Typical RDS(on) = 2.4 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) =

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MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (T

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MOSFET – N-Channel, POWERTRENCH) 100 V, 61 A, 16 mW FDP3652, FDB3652 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC (Typ

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MOSFET – N-Channel, POWERTRENCH) 80 V, 300 A, 1.4 mW FDBL86361-F085 Features  Typical RDS(on) = 1.1 mW at VGS = 10 V, ID = 80 A  Typical Qg(tot) =

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MOSFET – N-Channel, POWERTRENCH) 100 V, 61 A, 16 mW FDP3652, FDB3652 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC (Typ

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N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using hig

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MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (T

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2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhanceme

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RT3674AE Triple Channel PWM Controller for AMD SVI3 CPU/GPU Core Power Supply General Description The RT3674AE is a synchronous buck controller whic

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607，IIRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement

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AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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MMF60R360Q Datasheet MMF60R360Q 600V 0.36Ω N-channel MOSFET  Description MMF60R360Q is power MOSFET using Magnachip’s advanced super junction techno

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W360-VB W360-VB Datasheet N- and P-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) N-Channel 100 0.240 at

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