40-Channel Datasheet | Specifications & PDF Download

FDMS9410L-F085 N-Channel Logic Level PowerTrench® MOSFET FDMS9410L-F085 N-Channel Logic Level PowerTrench® MOSFET 40 V, 50 A, 4.1 mΩ Features „ Typi

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monolithic dual n-channel JFETs designed for • • • FEY Input Amplifiers •• Low and Medium Frequency Amplifiers • Impedance Converters • Precision I

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FDB0250N807L N-Channel PowerTrench® MOSFET March 2016 FDB0250N807L N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.2 mΩ Features „ Max rDS(on) = 2.2 m

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MOSFET – P-Channel, POWERTRENCH) -40 V, -50 A, 12.3 mW FDD4141-F085BK General Description This P−Channel MOSFET has been produced using onsemi’s prop

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www.atcsemi.com Features ● Advanced high cell density Trench technology ● Super Low Gate Charge ● Excellent CdV/dt effect decline ● Green Device Avail

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monolithic dual n-channel JFETs designed for • • • FEY Input Amplifiers •• Low and Medium Frequency Amplifiers • Impedance Converters • Precision I

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VS4620DE-G 40V/14A Dual N-Channel Advanced Power MOSFET Features V DS R @ DS(on),TYP VGS=10V 40 V 9 mΩ  Dual N-Channel R @ DS(on),TYP VGS=4.5V

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-40V, -8A P-Channel Power MOSFET GENERAL DESCRIPTION The Power MOSFET has extremely low on resistance, making it especially suitable for applications

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N AND P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS0407T4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate c

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40V, 100A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGM042R8T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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FDBL0150N60 N-Channel PowerTrench® MOSFET FDBL0150N60 N-Channel PowerTrench® MOSFET 60 V, 240 A, 1.5 mΩ June 2015 Features „ Typical RDS(on) = 1.1

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MOSFET – P-Channel POWERTRENCH) -40 V, 7.5 mW, -90 A FDD9509L-F085 Features • Typ rDS(on) = 6.0 mW at VGS = −10 V; ID = −70 A • Typ Qg(tot) = 50 nC

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40V, 8A Dual N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS4008T2 uses advanced trench technology and design to provide excellent RDS(on) with

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MOSFET – N-Channel, POWERTRENCH) 100 V, 240 A, 2.6 mW FDBL86063-F085 Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 7

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MOSFET – POWERTRENCH), N-Channel 100 V, 240 A, 2.6 mW FDBL86063 DATA SHEET www.onsemi.com Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A

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S-LN7405HDT3WG 40V N-Channel MOSFET 8 7 6 5 1. FEATURES ● Low thermal impedance. ● Exceptional on-resistance and maximum DC current capability ● We

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400V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.17 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  F

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Ordering number : ENN7730 www.DataSheet4U.com SANYO Semiconductors DATA SHEET Thick-Film Hybrid IC STK404-130S Overview One-Channel Class AB Audi

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SD7401 SIX-CHANNEL AUDIO AMPLIFIER DESCRIPTION SD7401 is a 6-channel audio amplifier with built-in microphone input amplifier. High quality audio outp

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STWA40N60M2 Datasheet N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package D(2, TAB) G(1) Features Order code ST

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