FDS4435BZ P-Channel PowerTrench® MOSFET www.Data.
VBsemi
17
FDS4435BZ - P-Channel MOSFET
FDS4435BZ-NL FDS4435BZ-NL Datasheet www.VBsemi.com P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V .
Fairchild Semiconductor
14
FDS4435BZ - P-Channel PowerTrench MOSFET
FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -10V, ID = -.
Fairchild Semiconductor
6
FDS4435BZ_F085 - P-Channel PowerTrench MOSFET
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -1.
Fairchild Semiconductor
5
FDMC4435BZ - MOSFET
FDMC4435BZ P-Channel Power Trench® MOSFET FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ November 2015 Features General Description.
Fairchild Semiconductor
4
4435BZ - FDS4435BZ
FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features Max rDS(.
ON Semiconductor
4
FDS4435BZ - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pro.
ON Semiconductor
4
FDMC4435BZ - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -18 A, 20 mW FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701 General Description This P−Channel MOSFET is pr.
ON Semiconductor
3
FDS4435BZ-F085 - P-Channel Power MOSFET
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET FDS4435BZ-F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -1.
ON Semiconductor
2
FDMC4435BZ-F127-L701 - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -18 A, 20 mW FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701 General Description This P−Channel MOSFET is pr.
Fairchild Semiconductor
1
FDMS4435BZ - MOSFET
FDMS4435BZ P-Channel Power Trench® MOSFET FDMS4435BZ P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ Features Max rDS(on) = 20 mΩ at VGS = -10 V,.
ON Semiconductor
1
FDMC4435BZ-F127 - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -18 A, 20 mW FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701 General Description This P−Channel MOSFET is pr.
ON Semiconductor
1
FDMS4435BZ - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -18 A, 20 mW FDMS4435BZ General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERT.