80N60 Datasheet | Specifications & PDF Download

SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extre

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Preliminary data HiPerFASTTM IGBT www.datasheet4u.com IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V

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MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage sup

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SGH80N60UFD SGH80N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low c

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MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage su

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FGH80N60FD2 600V, 80A Field Stop IGBT April 2008 FGH80N60FD2 600V, 80A Field Stop IGBT Features • High current capability • Low saturation voltage:

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IGBT - Field Stop 600 V, 80 A FGH80N60FD Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum per

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF380N60 ·FEATURES ·With TO-220F packaging ·Low switching loss ·Ultra low gate charge ·Easy

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCP380N60 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy t

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤38mΩ@VGS= 10V ·Fast

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MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage su

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FCD380N60E N-Channel MOSFET March 2013 FCD380N60E N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) =

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FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ =

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FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ =

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FCP380N60E / FCPF380N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP380N60E / FCPF380N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 10.2 A,

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FCP380N60E / FCPF380N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP380N60E / FCPF380N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 10.2 A,

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FCPF380N60-F152 — N-Channel MOSFET FCPF380N60-F152 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) =

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MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage sup

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Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol

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