80N60 Datasheet | Specifications & PDF Download

SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES

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CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extre

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Advance Technical Information X2-Class HiPerFETTM Power MOSFET AEC Q101 Qualified IXFH80N60X2A VDSS = ID25 =  RDS(on) 600V 80A 38m N-Channel En

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High Current IGBT IXSN80N60A VCES = IC25 = VCE(sat) = 600 V 160 A 3V Short Circuit SOA Capability Preliminary Data www.DataSheet4U.com G E E S

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤38mΩ@VGS= 10V ·Fast

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Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol

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IGBT with Diode Short Circuit SOA Capability IXSN 80N60AU1 VCES IC25 VCE(sat) = 600 V = 160 A = 3V C G E www.DataSheet4U.com E Symbol VCES VCGR

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IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.5 V 180 ns Preliminary Data Sheet E

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SGH80N60UFD SGH80N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low c

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Preliminary data HiPerFASTTM IGBT www.datasheet4u.com IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V

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www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES

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FGH80N60FD2 600V, 80A Field Stop IGBT April 2008 FGH80N60FD2 600V, 80A Field Stop IGBT Features • High current capability • Low saturation voltage:

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Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN80N60P3 VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifi

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Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF380N60 ·FEATURES ·With TO-220F packaging ·Low switching loss ·Ultra low gate charge ·Easy

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MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage sup

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SGH80N60UF SGH80N60UF Ultra-Fast IGBT IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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FGH80N60FD — 600 V Field Stop IGBT FGH80N60FD 600 V Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ I

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FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ =

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