8205 PRELIMINARY INFORMATION (subject to change wi.
8205A - Dual N-Channel MOSFET
Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON.8205A - Dual N-Channel MOSFET
8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p.FS8205A - N-Channel MOSFET
Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process t.ML8205 - (ML8204 / ML8205) Tone Ringer
w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .TA8205AH - 18W BTL x 2CH AUDIO POWER AMPLIFIER
TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan.8205 - N-CHANNEL POWER MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM8205 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8205 uses advanced trench t.8205 - LOW-DROPOUT REGULATORS
8205 PRELIMINARY INFORMATION (subject to change without notice) December 6, 1999 NC OR ADJ* OUT LOW-DROPOUT REGULATORS — HIGH EFFICIENCY Designed spe.DP8205 - Dual N-Channel Enhancement Power MOSFET
DP8205 www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.1 DP8205 uses advanced trench technology to.TXY8205A - Dual N-CHANNEL High Density Trench MOSFET
Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V FEATURES High.RU8205G - N-Channel Advanced Power MOSFET
RU8205G N-Channel Advanced Power MOSFET MOSFET Features • 20V/6A, RDS (ON) =21mΩ (Typ.) @ VGS=4.5V RDS (ON) =30mΩ (Typ.) @ VGS=2.5V • Super High Dens.FS8205A - Dual N-Channel Enhancement Mode Power MOSFET
REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrF.ML8205A - Battery protection
ML8205A DESCRIPTION The ML8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low .HD8205A - N-Channel Enhancement Mode Power MOSFET
HD8205A N-Channel Enhancement Mode Power MOSFET Description The HD8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg.FS8205A - Dual N-Channel MOSFET
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com FS8205A Dual N-Channel Enhancement Mode MOSFET Features z 20V/6A, RDS(ON)<25mΩ @.RU8205C6 - N-Channel Advanced Power MOSFET
RU8205C6 N-Channel Advanced Power MOSFET Features • 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High D.S8205A - Dual N-Channel MOSFET
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type N MMOOSFSEFTET Dual N-Channel Enhancement Mode Field Effect Transistor S8205A Features.STN8205AA - Dual N Channel Enhancement Mode MOSFET
STN8205AA Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8205AA is the dual N-Channel enhancement mode power field effect transistor wh.8205A - Dual N-Channel MOSFET
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1/4 8205A Dual N-Channel Enh.SM8205AO - Dual N-Channel MOSFET
SM8205AO ® Dual N-Channel Enhancement Mode MOSFET Features · 18V/6A, RDS(ON)= 23mW(typ.) @ VGS= 4.5V RDS(ON)= 34mW(typ.) @ VGS= 2.5V · Reliable and .TXY8205 - Dual N-CHANNEL High Density Trench MOSFET
TXY8205 Dual N CHANNEL High Density Trench MOSFET TYPE TXY8205 BVDSS 20V RDS(ON) 25mΩ@VGS=4.5V 35mΩ@VGS=2.5V ID 6A 4A Green Product Pin Descript.