8205 Datasheet | Specifications & PDF Download

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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AiT Semiconductor Inc. www.ait-ic.com AM8205 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8205 uses advanced trench t

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Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process t

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DP8205 www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.1 DP8205 uses advanced trench technology to

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REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrF

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http://www.ncepower.com Pb Free Product NCE8205 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205 uses advanced trench technology

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ATA8203/ATA8204/ATA8205 Industrial UHF ASK/FSK Receiver DATASHEET Features ● Frequency receiving range of (3 versions) ● f0 = 312.5MHz to 317.5MHz or

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PE8205 N-Channel Enhancement Mode Power MOSFET Description The 8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge an

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS NCE8205 N-Channel MOSFETS FEATURE Low on-resistance APPLICAT

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CEG8205-VB CEG8205-VB Datasheet Dual N-Channel 25-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 25 0.032

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PE8205A N-Channel Enhancement Mode Power MOSFET Description The PE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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SMT CURRENT SENSE TRANSFORMERS P820X Series Height: 5.1mm Max* Footprint: 8.4mm x 7.2mm Max Current Rating: up to 10A Frequency Range: 50kHz to 1MHz L

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CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V.

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MX8205L N-Channel Enhancement Mode Power MOSFET The MX8205L uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper

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TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan

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ML8205A DESCRIPTION The ML8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low

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8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p

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HD8205A N-Channel Enhancement Mode Power MOSFET Description The HD8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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MX8205AH N-Channel Enhancement Mode Power MOSFET The MX8205AH uses advanced trench technology to provide excellent RDS(ON), low gate charge and op

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