8205 Datasheet | Specifications & PDF Download

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applicati

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DESCRIPTION The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65

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ZL8205B Specification V1.0 N-Channel Trench Power MOSFET 2013/3/4 Taiwan Zhuolang Micro Techno logy Co.,Ltd ZL8205B N-Channel Trench Power MOSFET Ge

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http://www.ncepower.com Pb Free Product NCE8205 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205 uses advanced trench technology

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TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan

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NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ

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Data Sheet FEATURES Ideal for current shunt applications High common-mode voltage range −2 V to +65 V operating −25 V to +75 V survival Gain = 50 V/V

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® RT8205A/B/C High Efficiency, Main Power Supply Controllers for Notebook Computers General Description The RT8205A/B/C dual step-down, switch-mode p

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NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ

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SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 18V ID (A) 5A RDS(ON) (m ) Max 25 @VGS = 4.5V 45 @VGS = 2.5V D1 (2, 5) 1 TSO

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8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p

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AiT Semiconductor Inc. www.ait-ic.com AM8205 MOSFET 19.5V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The AM8205 is available in SOT-26 and TSSOP8 packag

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AiT Semiconductor Inc. www.ait-ic.com AM8205 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8205 uses advanced trench t

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Main Product Characteristics: VDSS 20V RDS(on) 19.6mΩ (typ.) ID 6A TSSOP-8 Features and Benefits:  Advanced MOSFET process technology  Specia

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8205 PRELIMINARY INFORMATION (subject to change without notice) December 6, 1999 NC OR ADJ* OUT LOW-DROPOUT REGULATORS — HIGH EFFICIENCY Designed spe

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http://www.ncepower.com Pb Free Product NCE8205E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205E uses advanced trench technolo

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PE8205A N-Channel Enhancement Mode Power MOSFET Description The PE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Dual N-Channel Enhancement Mode Power MOSFET LN8205F ■ Features  High Power and current handing capability  Lead free product is acquired  Surfac

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FDMQ8205 - GreenBridgeTM2 Series of High-Efficiency Bridge Rectifiers September 2016 FDMQ8205 GreenBridgeTM 2 Series of High-Efficiency Bridge Rect

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