8205 Datasheet | Specifications & PDF Download

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p

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8205 PRELIMINARY INFORMATION (subject to change without notice) December 6, 1999 NC OR ADJ* OUT LOW-DROPOUT REGULATORS — HIGH EFFICIENCY Designed spe

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Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process t

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AiT Semiconductor Inc. www.ait-ic.com AM8205 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8205 uses advanced trench t

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RT8205L/M High Efficiency, Main Power Supply Controller for Notebook Computer General Description The RT8205L/M is a dual step-down, switch mode power

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DP8205 www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.1 DP8205 uses advanced trench technology to

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TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan

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Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V FEATURES High

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com FS8205A Dual N-Channel Enhancement Mode MOSFET Features z 20V/6A, RDS(ON)<25mΩ @

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Application Notes: AN_SY8205 High Efficiency Fast Response，5A, 30V Input Synchronous Step Down Regulator Preliminary Specification General Descriptio

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HD8205A N-Channel Enhancement Mode Power MOSFET Description The HD8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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MX8205AH N-Channel Enhancement Mode Power MOSFET The MX8205AH uses advanced trench technology to provide excellent RDS(ON), low gate charge and op

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Dual N-Channel Enhancement Mode STN8205 ■DESCRIPTION 20V Dual N-Channel Enhancement Mode MOSFET ■FEATURE The STN8205 is the Dual N-Channel logic e

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1/4 8205A Dual N-Channel Enh

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CS8205E N-Channel Trench Power MOSFET General Description The CS8205E uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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WSP8205-VB WSP8205-VB Datasheet Dual N-Channel 25-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 25 0.032

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RU8205C6 N-Channel Advanced Power MOSFET Features • 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High D

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