C-Mos Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

Rating: 4 ★★★★ (161 votes)

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

Rating: 3 ★★★ (137 votes)

CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

Rating: 3 ★★★ (113 votes)

Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

Rating: 2 ★★ (74 votes)

A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

Rating: 2 ★★ (64 votes)

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% aval

Rating: 2 ★★ (55 votes)

www.DataSheet4U.com Rev.2.0_00 HIGH RIPPLE-REJECTION LOW DROPOUT MIDDLE OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1132 Series The S-1132 Series is a

Rating: 1 ★ (47 votes)

HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

Rating: 1 ★ (44 votes)

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

Rating: 1 ★ (42 votes)

RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

Rating: 1 ★ (42 votes)

FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

Rating: 1 ★ (41 votes)

Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

Rating: 1 ★ (40 votes)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

Rating: 1 ★ (39 votes)

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

Rating: 1 ★ (35 votes)

Rev.3.0_01 HIGH RIPPLE-REJECTION LOW DROPOUT MIDDLE OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1131 Series www.DataSheet4U.com The S-1131 Series is a

Rating: 1 ★ (35 votes)

S-1165 Series www.sii-ic.com © Seiko Instruments Inc., 2002-2015 HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.4.1_00 The S-1165 Ser

Rating: 1 ★ (32 votes)

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistan

Rating: 1 ★ (31 votes)

S-1315 Series www.sii-ic.com © Seiko Instruments Inc., 2011-2014 LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.2_00 Th

Rating: 1 ★ (31 votes)

STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Except

Rating: 1 ★ (30 votes)

RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

Rating: 1 ★ (29 votes)