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CHA3024-FDB 2-22GHz LNA with AGC GaAs Monolithic Microwave IC in SMD hermetic leadless package Description The CHA3024-FDB is a distributed Low Noise

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CT UNITE COMMUNICATION ECHNOLOGY LTD SPECIFICATIONS The information contained herein is the exclusive property of ZK and shall not be distribwritten p

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CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band

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CHA8212-99F 25W X-Band High Power Amplifier GaN Monolithic Microwave IC Description The CHA8212-99F is a three-stage GaN High Power Amplifier in t

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EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate ps

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CHA1077a www.DataSheet4U.com RoHS COMPLIANT W-band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1077a is a W-band monolithic

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MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS KXG @Downsized from current KMX series @For electronic ballast circuits and other long life required applic

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MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS KZH Lower Z Low impedance, 105C @Ultra Low impedance for Personal Computers Storage Equipment @Endurance

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CHA8054-99F 20W X-Band High Power Amplifier GaN Monolithic Microwave IC Description V+ The CHA8054-99F is a two stage High Power Amplifier operat

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CHA4350-QDG 5.5-11.7GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4350-QDG is a three stage mon

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CHA8252-99F 10W K-Band High Power Amplifier GaN Monolithic Microwave IC Description The CHA8252-99F is a three-stage GaN VD High Power Amplifier

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EC2612-99F 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612-99F is based on a 0.15µm gate pseudomor

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CHA2069-FAB 16-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA2069-FAB is a three-stage self-biased wide b

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CHKA012a99F 140W Power Bar GaN HEMT on SiC Description The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offer

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CHP4511-99F 6-18GHz Phase-shifter GaAs Monolithic Microwave IC Description _ _ _ A C DE The CHP4511-99F is a 4-bit digital phase- shifter w

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CHA5293a 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5293a is a high gain three-stage monolithic high power amplifi

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DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump te

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Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freetradez

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CHA8012-99F C Band High Power Amplifier GaAs Monolithic Microwave IC Description CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (

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