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1Gbit NAND FLASH FMND1GXXX3D 3V/1.8V, x8/x16 1G-BIT NAND FLASH Rev.09 (Sep. 8. 2016) 1 Documents title 1Gbit (128Mx8Bit, 64Mx16Bit) NAND FLASH Revis

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR

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C106 Series Pin Out 3 21 Thyristors Surface Mount > 200 - 600V > C106 Series Pb Description Glassivated PNPN devices designed for high volume consum

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1G bit (128Mx8Bit)NAND FLASH 1Gb NAND FLASH AFND1G08U3 Rev.06 Nov. 2013 Confidential 1 1G bit (128Mx8Bit)NAND FLASH Revision No. History Draft

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1Gbit NAND FLASH FMND1GXXX3D 3V/1.8V, x8/x16 1G-BIT NAND FLASH Rev.09 (Sep. 8. 2016) 1 Documents title 1Gbit (128Mx8Bit, 64Mx16Bit) NAND FLASH Revis

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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Features and Benefits • Glass Passivated Die Construction • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 30A Peak •

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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revisio

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT (Prliminary) M53D1G1664A Mobile DDR SDRAM 16M x16 Bit x 4 Banks Mobile DDR SDRAM Features  JEDEC Standard  Internal pipelined double-data-

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR

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APTGT150DA120D1G Boost chopper Trench + Field Stop IGBT Power Module 3 VCES = 1200V IC = 150A @ Tc = 80°C Application • AC and DC motor control • Swi

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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Datasheet of SAW Device SAW Dual Filter for B34/B39 / 1in2out Balanced /1511 Murata PN: SAWFD1G90AH0F0A  Feature  Input and Output combined Type  

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