D1G Datasheet | Specifications & PDF Download

ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR

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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revisio

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SAW FILTER FOR TD-SCDMA Murata part number :SAWFD1G90ＫA0F0A (fc=1900MHz) Package Dimensions Top View 1.50±0.05 (9) (8) (7) (6) (10) Dot Marking(φ0

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DAC1627D1G25 Dual 16-bit DAC, LVDS interface, up to 1.25 Gsps, x2, x4 and x8 interpolating Rev. 1 — 29 April 2011 Objective data sheet 1. General des

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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1Gbit NAND FLASH FMND1GXXX3D 3V/1.8V, x8/x16 1G-BIT NAND FLASH Rev.09 (Sep. 8. 2016) 1 Documents title 1Gbit (128Mx8Bit, 64Mx16Bit) NAND FLASH Revis

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1Gbit NAND FLASH FMND1GXXX3D 3V/1.8V, x8/x16 1G-BIT NAND FLASH Rev.09 (Sep. 8. 2016) 1 Documents title 1Gbit (128Mx8Bit, 64Mx16Bit) NAND FLASH Revis

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www.ti.com SN74CBTD1G384 SINGLE FET BUS SWITCH WITH LEVEL SHIFTING SCDS066K – JULY 1998 – REVISED JUNE 2006 FEATURES • 5-Ω Switch Connection Betwee

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www.ti.com SN74CBTD1G125 SINGLE FET BUS SWITCH WITH LEVEL SHIFTING SCDS063L – JULY 1998 – REVISED JUNE 2006 FEATURES • 5-Ω Switch Connection Betwee

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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Features and Benefits • Glass Passivated Die Construction • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 30A Peak •

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Infrared LEDs sSID1010CXM series (Wide viewing angle) Outline drawing A Cathode (P.2.54) 0.65max 0.5±0.1 0.5±0.1 Resin heap 1.5max SID1010CXM

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ESMT (Prliminary) M53D1G1664A Mobile DDR SDRAM 16M x16 Bit x 4 Banks Mobile DDR SDRAM Features  JEDEC Standard  Internal pipelined double-data-

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ESMT (Prliminary) Mobile DDR SDRAM Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-dir

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Datasheet of SAW Device SAW Dual Filter for B34/B39 / 1in1out Unbalanced /1511 Murata PN: SAWFD1G90KZ0F0A  Feature  Input and Output combined Type 

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DAC1617D1G0 Dual 16-bit DAC, LVDS interface, up to 1 Gsps, x2, x4 and x8 interpolating Rev. 4 — 12 December 2012 Product data sheet 1. General des

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