DC630 Datasheet | Specifications & PDF Download

August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are p

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DATA SHEET www.onsemi.com Digital FET, Dual N-Channel FDC6303N General Description These dual N−Channel logic level enhancement mode field effect tr

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July 1997 FDC6301N Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pr

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FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using

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October 1997 FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are

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FDC6306P February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench™ MOSFET General Description These P-Channel 2.5V specified MOSFETs are pro

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FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor'

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MOSFET – Dual, N-Channel, POWERTRENCH) 2.5 V Specified FDC6305N General Description These N−Channel low threshold 2.5 V specified MOSFETs are produced

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July 1997 FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using Fairch

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FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOS

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FDC6308P July 1999 FDC6308P Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged

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PA RT High Current Power Line Chokes NU MB ER Series DC630 Physical Parameters Inches Millimeters A 0.630 ± 0.030 16.0 ± 0.762 B (C/L to C/L) See

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DATA SHEET www.onsemi.com MOSFET– Specified, Dual P-Channel, POWERTRENCH) 2.5 V FDC6306P General Description These P−Channel 2.5 V specified MOSFETs

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FDC6306P FDC6306P Datasheet www.VBsemi.com Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.075 at VGS = - 4.5V 0.100

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Dual, N-Channel, Digital FET FDC6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin

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