FDG Datasheet | Specifications & PDF Download

FDG6331L FDG6331L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic e

(11 views)

MOSFET – Dual, N-Channel, POWERTRENCH) 20 V, 2.1 A, 550 mW FDG6317NZ General Description This dual N-Channel MOSFET has been designed specifically

(11 views)

FDG6318PZ January 2003 FDG6318PZ Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produc

(10 views)

FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild S

(10 views)

MOSFET – Dual N-Channel, POWERTRENCH® 20 V, 1.2 A, 175 mW FDG1024NZ Description This dual N−Channel logic level enhancement mode field effect transist

(9 views)

FDG312P FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description Features This P-Channel MOSFET is produced using ON Semiconducto

(9 views)

PA102FDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 115mΩ @VGS = -4.5V ID -10A TO-252 ABSOLUTE MAXIMUM RATINGS (T

(8 views)

FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Sem

(8 views)

FDG6317NZ January 2004 FDG6317NZ Dual 20v N-Channel PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed specificall

(8 views)

FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ Features „ Max rDS(on) =

(8 views)

Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0180 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, various com

(8 views)

FDG327NZ FDG327NZ 20V N-Channel PowerTrench® MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve th

(8 views)

FDG313N FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's prop

(8 views)

(8 views)

FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features Q1: N-Chan

(8 views)

FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET April 2007 tm Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Featu

(7 views)

FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features „ Max rDS(on) = 95m: at

(7 views)

435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode --Large Active Area --Low Capacitance Ele

(7 views)

FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

(7 views)

FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged g

(7 views)