FDG Datasheet | Specifications & PDF Download

w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODUL

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w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODUL

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FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ Features „ Max rDS(on) =

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FDG327NZ October 2015 FDG327NZ 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improv

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FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.75A,0.4Ω Features „ Max rDS(on) = 0

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FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET April 2007 tm Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Featu

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FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features „ Max rDS(on) = 95m: at

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435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode --Large Active Area --Low Capacitance Ele

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Product Specification Sheet Photodiodes CAUTION ELECTROSTATIC SENSITIVE DEVICE DO NOT HANDLE EXCEPT WITH AN ESD WRIST STRAP AT A STATIC-FREE WORKSTA

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PA102FDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 115mΩ @VGS = -4.5V ID -10A TO-252 ABSOLUTE MAXIMUM RATINGS (T

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FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Sem

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FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET is produced using Fairchild Sem

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FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairc

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FDG314P July 2000 FDG314P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistor is produced using Fairc

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FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchil

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FDG316P December 2001 FDG316P P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fair

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FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDG327N October 2001 FDG327N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t

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FDG328P October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a

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FDG329N October 2001 FDG329N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t

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