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PA102FDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 115mΩ @VGS = -4.5V ID -10A TO-252 ABSOLUTE MAXIMUM RATINGS (T

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NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG TO-252 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -20 115m ID -

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PA102FDG P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.033 at VGS = - 10 V 0.046 at VGS = - 4.5 V ID (A)d - 26 - 21

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Product Specification Sheet Photodiodes CAUTION ELECTROSTATIC SENSITIVE DEVICE DO NOT HANDLE EXCEPT WITH AN ESD WRIST STRAP AT A STATIC-FREE WORKSTA

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435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode --Large Active Area --Low Capacitance Ele

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November 1998 FDG6321C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transist

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w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODUL

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www.DataSheet4U.com April 2002 FDG6313N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effe

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FDG6323L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment w

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FDG312P FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description Features This P-Channel MOSFET is produced using ON Semiconducto

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FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produce

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Digital FET, Dual N & P Channel FDG6321C General Description These dual N & P−Channel logic level enhancement mode field effect transistors are produ

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FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairc

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FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchil

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FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged g

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March 1999 FDG6323L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic

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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only www.DataSheet4U.com SURFACE MOUNT LED TAPE AND REEL Pb Lead-Free Parts LURFDGL9553/R5/TR1 DAT

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FDG327NZ FDG327NZ 20V N-Channel PowerTrench® MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve th

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 20 V FDG6335N General Description This N−Channel MOSFET has been designed specifically to

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Digital FET, Dual N & P Channel FDG6320C General Description These dual N & P−Channel logic level enhancement mode field effect transistors are prod

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