FORD Datasheet | Specifications & PDF Download

Preliminary Product Description Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in

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GOFORD 9435 DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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GOFORD Description The 3415 A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a

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G050N06LL N-Channel Enhancement Mode Power MOSFET Description The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate

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G040P04M P-Channel Enhancement Mode Power MOSFET Description The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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GOFORD DESCRIPTION The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

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GOFORD N-Channel Trench MOSFET Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be u

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www.DataSheet4U.com OX16C95x OX16PCI954 HIGH-PERFORMANCE UART FAMILY REFERENCE DRIVERS This document describes installation and use of the Oxford Se

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G05P06L P-Channel Enhancement Mode Power MOSFET Description The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate char

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GOFORD Description The 6706A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used to form a l

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G2K2P10SE P-Channel Enhancement Mode Power MOSFET Description The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent

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GOFORD P-Channel Trench Power MOSFET General Description The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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GOFORD 431C FEATURES Programmable Output Voltage to 40V Low Dynamic Output Impedance 0.27 ppm/ DESCRIPTION The 431C is a three-terminal adjustable

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GOFORD 8205A P R ODUC T S UMMAR Y VDSS RDS(ON) ID @ 4.0V (typ) 20V 21mΩ 4A - D1 D2 G1 G2 S1 S2 F E AT UR E S S uper high dense cell desig

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GOFORD Description The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

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GOFORD G2003A Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in

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GOFORD N-Channel Trench MOSFET Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be u

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G170P06S P-Channel Enhancement Mode Power MOSFET Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G300N04D3 N-Channel Enhancement Mode Power MOSFET Description The G300N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate

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