FQD Datasheet | Specifications & PDF Download

FQD4N60/FQI4N60/FQU4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQD4N60 & FQI4N60 & FQU4N60 have been fabricated using an

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FQD12P10 / FQU12P10 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistor

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FQD45N03L March 2004 FQD45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced MOSFET techno

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FQD1N60 / FQU1N60 April 2000 QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr

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FQD2P25 / FQU2P25 April 2000 QFET FQD2P25 / FQU2P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect tr

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FQD16N25C — N-Channel QFET® MOSFET FQD16N25C N-Channel QFET® MOSFET 250 V, 16 A, 270 mΩ Features • 16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V,

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FQD8P10 / FQU8P10 QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors ar

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MOSFET – P-Channel, QFET -200 V, -5.7 A, 690 mW FQD7P20 Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s propriet

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FQD19N10 — N-Channel QFET® MOSFET FQD19N10 N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ November 2013 Description This N-Channel enhancement mode p

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FQD4P40 / FQU4P40 August 2000 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect t

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FQD7N10 / FQU7N10 December 2000 QFET FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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FQD12P10TM_F085 P-Channel MOSFET February 2010 FQD12P10TM_F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power fiel

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N-Channel 100-V (D-S) MOSFET FQD20N10 PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 100 0.075 at VGS = 10 V ID (A)a 20 Qg (Typ) 31 nC TO-252 FEATURES •

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FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET www.onsemi.com FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω Features • 1 A, 600 V,

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isc N-Channel MOSFET Transistor FQD50N06 ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)

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FQD13N10L / FQU13N10L December 2000 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

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FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET FQD2N100 / FQU2N100 N-Channel QFET® MOSFET 1000 V, 1.6 A, 9 Ω October 2013 Description This N-Channel

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