G1612-GlobalMixed Datasheet | Specifications & PDF Download

ESMT DDR3(L) SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) ˗ SSTL_135: VDD/VDDQ = 1.35V(-0.067V/+0.1V)  JEDEC DDR3(L

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ESMT DR3 SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti

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Data Sheet 1 Ω Typical On Resistance, ±5 V, +12 V, +5 V, and +3.3 V Quad SPST Switches ADG1611/ADG1612/ADG1613 FEATURES 1 Ω typical on resistance 0.

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ESMT DDR3 SDRAM Feature z Interface and Power Supply „ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) z JEDEC DDR3 Compliant „ 8n Prefetch Architecture „ Different

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NJG1612HA8 www.DataSheet4U.com SPDT Switch GaAs MMIC Q GENERAL DESCRIPTION NJG1612HA8 is a SPDT switch IC featured extremely high speed switching. Th

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ESMT DDR3 SDRAM Feature z Interface and Power Supply „ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) z JEDEC DDR3 Compliant „ 8n Prefetch Architecture „ Different

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ESMT DR3 SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti

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ESMT DR3 SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti

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ESMT DR3 SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti

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ESMT DR3 SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti

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ESMT DR3 SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti

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ESMT DR3 SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti

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ESMT M54D2G16128A LPDDR2 SDRAM 16M x 16 Bit x 8 Banks LPDDR2 SDRAM Feature  JEDEC LPDDR2‐S4B compliance  HSUL_12 interface (High Speed Untermina

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A. SCOPE This specification applies magnetic buzzer, KXG1612C KXG1612C B. SPECIFICATION No. Item 1 Rated Voltage 2 Operating Volt. 3 Mean Cu

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A. SCOPE This specification applies magnetic buzzer, KXG1612 KXG1612 B. SPECIFICATION No. Item 1 Rated Voltage 2 Operating Volt. 3 Mean Current Un

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ESMT DR3 SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti

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Global Mixed-mode Technology G1612 Programmable Vcom Buffer with NVM for TFT LCD Features „ Supply Operation Range : 6.5V to 18V „ Rail-to-Rail Vco

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TG161x_171xHG(hg-hg).book Page 1 Monday, February 21, 2011 1:13 PM Használati útmutató Digitális zsinórnélküli telefon Típus KX-TG1611HG KX-TG1612HG K

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ESMT DDR III SDRAM Feature z 1.5V ± 0.075V (JEDEC Standard Power Supply) z Programmable CAS　Latency: 5, 6, 7, 8, 9, 10 and 11 z 8 Internal memory bank

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OneNAND4G(KFW4G16Q2M-DEB5) OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY www.DataSheet4U.com OneNANDTM Specification Density

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