GH4 Datasheet | Specifications & PDF Download

FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 60

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HiPerFASTTM IGBTs w/ Diode C2-Class High Speed IGBTs IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 VCES = IC110 = ≤VCE(SAT) tfi(typ) = 600V 40A 2.7

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High Voltage IGBT Low VCE(sat) Preliminary Data Sheet IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 IXGT 40N120A2 V = 1200 I CES = 75 V ≤C25 CE(sat)

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CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400

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MCP Specification 4Gb (256Mb x16) NAND Flash + 4Gb (64Mb x32 2/CS 2CKE) mobile DDR http://www.DataSheet4U.net/ This document is a general product des

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Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode High Speed PT IGBT for 40 - 100kHz Switching IXG

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PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4

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HiPerFAST TM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE(sat) tfi typ www.DataSheet4U.com = 600 V = 75 A = 2.7 V = 3

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GenX3TM 600V IGBTs Ultra Low Vsat PT IGBTs for up to 5kHz switching IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SS

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CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400

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CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, ope

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CGH40006S 6 W, RF Power GaN HEMT, Plastic Description The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). T

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CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat

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FEATURES Very Fast Charge/Discharge – High Power Density – Lower ESR – RoHS Compliant APPLICATIONS Battery Backup/Alternative – Pulse Power – Energ

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CGH40180PP 180 W, RF Power GaN HEMT Description The CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG

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CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Description The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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