FGH40N60SFD (Fairchild Semiconductor)
40A Field Stop IGBT
FGH40N60SFD — 600 V, 40 A Field Stop IGBT
March 2015
FGH40N60SFD
600 V, 40 A Field Stop IGBT
Features
• High Current Capability • Low Saturation Vo
(99 views)
U05GH44 (Toshiba Semiconductor)
HIGH SPEED RECTIFIER
U05GH44,U05JH44
www.DataSheet4U.com
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
U05GH44,U05JH44
HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY)
l Repe
(85 views)
86BYGH450B (DOUWEI ELECTRIC)
Stepper Motor
CHANGZHOU DOUWEI ELECTRIC CO.,LTD.
86BYGH450
· : 5% · : 90°C () · : -20°C~ +40°C · : 100MΩ Min.500V DC · : 500V AC 1min · : 0.02mm Max.(450g ) ·
(47 views)
CGH40010 (Cree)
RF Power GaN HEMT
PRELIMINARY
CGH40010
10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4
(42 views)
IXGH40N60C2D1 (IXYS)
HiPerFAST IGBT
HiPerFASTTM IGBTs w/ Diode
C2-Class High Speed IGBTs
IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1
VCES =
IC110 =
≤VCE(SAT)
tfi(typ)
=
600V 40A 2.7
(42 views)
IXGH48N60C3D1 (IXYS Corporation)
GenX3 600V IGBT
www.DataSheet.co.kr
GenX3TM 600V IGBT with Diode
High speed PT IGBT for 40-100kHz Switching
IXGH48N60C3D1
VCES IC110 VCE(sat) tfi(typ)
= = ≤ =
60
(39 views)
CGH40035F (CREE)
RF Power GaN HEMT
CGH40035F
35 W, RF Power GaN HEMT
Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, ope
(39 views)
H9DA4GH4JJAMCR (Hynix)
NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS)
MCP Specification 4Gb (256Mb x16) NAND Flash + 4Gb (64Mb x32 2/CS 2CKE) mobile DDR
http://www.DataSheet4U.net/
This document is a general product des
(39 views)
FGH40N65UFD (Fairchild Semiconductor)
Field Stop IGBT
www.DataSheet.co.kr
FGH40N65UFD 600V, 40A Field Stop IGBT
March 2009
FGH40N65UFD
650V, 40A Field Stop IGBT
Features
• High current capability • Low
(38 views)
CGH40120F (MACOM)
RF Power GaN HEMT
CGH40120F
120 W, RF Power GaN HEMT
Description
The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4
(38 views)
IXGH40N120A2 (IXYS)
High Voltage IGBT
High Voltage IGBT
Low VCE(sat)
Preliminary Data Sheet
IXGH 40N120A2 IXGT 40N120A2
IXGH 40N120A2 IXGT 40N120A2
V = 1200
I CES = 75
V ≤C25 CE(sat)
(37 views)
CGH40025F (Cree)
GaN HEMT
PRELIMINARY
CGH40025F
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH
(36 views)
IXGH40N60C2 (IXYS)
HiPerFAST IGBT
HiPerFAST
TM
IGBT
C2-Class High Speed IGBTs
IXGH 40N60C2 IXGT 40N60C2
VCES IC25 VCE(sat) tfi typ
www.DataSheet4U.com
= 600 V = 75 A = 2.7 V = 3
(36 views)
85BYGH450A-06 (KySan)
Stepper Motor
Fax Orders to 650-960-3875
Step Angle 1.8°±5% Insulation Resistant 500V DC 100MO Min Insulation Strength 50Hz 1Minute 500V Min Ambient Temperature -2
(36 views)
CGH40006P (MACOM)
RF Power GaN HEMT
CGH40006P
6 W, RF Power GaN HEMT
Description
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400
(36 views)
FGH40T65SHDF (Fairchild Semiconductor)
IGBT
FGH40T65SHDF — 650 V, 40 A Field Stop Trench IGBT
FGH40T65SHDF
650 V, 40 A Field Stop Trench IGBT
May 2014
Features
• Maximum Junction Temperature
(35 views)
CGH40006S (Cree)
RF Power GaN HEMT
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400
(35 views)
CGH40006S (MACOM)
RF Power GaN HEMT
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Description
The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). T
(35 views)
IXGH40N60 (IXYS Corporation)
High speed IGBT
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A
VCES
600 V 600 V
IC25
75 A 75 A
VCE(sat)
2.5 V 3.0 V
Symbol
Test Conditions
(34 views)
86BYGH450A (DOUWEI ELECTRIC)
Stepper Motor
CHANGZHOU DOUWEI ELECTRIC CO.,LTD.
86BYGH450
· : 5% · : 90°C () · : -20°C~ +40°C · : 100MΩ Min.500V DC · : 500V AC 1min · : 0.02mm Max.(450g ) ·
(34 views)
