CGH40006S RF Power GaN HEMT

Cree

CGH40006S Description

CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH400.

CGH40006S Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65 % Efficiency at PIN = 32 dBm
* 28 V Operation

📥 Download Datasheet

CGH40006S Datasheet Preview — Preview of CGH40006S PDF

Datasheet Details

Part number: CGH40006S
Manufacturer: Cree
File Size: 1.71 MB
Datasheet: CGH40006S-Cree.pdf
Description: RF Power GaN HEMT

📁 Related Datasheet

CGH40006P - RF Power GaN HEMT (MACOM)
CGH40010 - RF Power GaN HEMT (MACOM)
CGH40025 - RF Power GaN HEMT (MACOM)
CGH40035F - RF Power GaN HEMT (MACOM)
CGH40045 - DC-4GHz RF Power GaN HEMT (MACOM)
CGH40090PP - RF Power GaN HEMT (Wolfspeed)
CGH40120F - RF Power GaN HEMT (MACOM)
CGH40180PP - 180W RF Power GaN HEMT (MACOM)

📌 All Tags

Power GaN HEMT Cree

Cree CGH40006S-like datasheet

CGH40025F - GaN HEMT
CGH27015F - GaN HEMT
CGH27030F - GaN HEMT
CGH27060F - GaN HEMT
CGH31240F - GaN HEMT
CGH35015 - GaN HEMT