CGH40006S RF Power GaN HEMT

Cree

Description

CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH400.

📥 Download Datasheet

CGH40006S Datasheet Preview — Preview of CGH40006S PDF

Datasheet Specifications

Part number: CGH40006S
Manufacturer: Cree
File Size: 1.71 MB
Datasheet: CGH40006S-Cree.pdf
Description: RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65 % Efficiency at PIN = 32 dBm
* 28 V Operation

CGH40006S Distributors

📁 Related Datasheet

CGH40006P CGH40010 CGH40025 CGH40035F CGH40045 CGH40090PP

📌 All Tags

CGH40006S Power GaN HEMT Cree

Cree CGH40006S-like datasheet