Globaltech GSM Datasheet | Specifications & PDF Download

GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to

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GSM2309KP 30V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench

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GSMDC3906X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSMDC3906Z 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSMDC3908Z 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSMDC3912Z 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSMDC2604Z 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSMD18N20 200V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSMDD10N20 200V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog

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GSMDD03N20 200V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technol

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GSMD35N15 150V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSMD25N15 150V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSMDD0966 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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GSM10N10DF 100V N-Channel MOSFETs Product Description The GSM10N10DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON an

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GSMDD0906 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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GSMDD0904 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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GSMDD3906 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolog

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GSMDD3094 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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GSMDD4906 40V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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GSMDD6912 60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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