H83 Datasheet | Specifications & PDF Download

AT24C512C I2C-Compatible (2-wire) Serial EEPROM 512-Kbit (65,536 x 8) DATASHEET Features  Low-voltage and Standard-voltage Operation ̶ VCC = 1.7V to

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page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 ECH83 sheet 1 2 3 A B C D E F G H I J FP date 1957.12.12 1957.12.12 1957.12.12 1958.10.10 1958.10.10 1958.10.1

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February 1997 NDH833N N-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 N-Channel enhancement mode power field effec

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December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effec

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May 1997 NDH8303N Dual N-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 N-Channel enhancement mode power field eff

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IRFH8316PbF VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ ID (@Tc(Bottom) = 25°C) 30 ± 20 2.95 4.30 30.0 50i V V mΩ nC A HEXFET® Power

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May 1997 NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field eff

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IRFH8311PbF VDS Vgs max 30 ± 20 2.1 3.2 30 80 V V mΩ nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 2

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January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode p

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June 1996 NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transist

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IRFH8337PbF HEXFET® Power MOSFET VDS VGS max 30 ± 20 12.8 19.9 4.7 16.2 V V mΩ nC A PQFN 5X6 mm RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID

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May 1997 NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field eff

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July 1996 NDH831N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transist

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December 1996 NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode

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NB3H83905C 1.8V/2.5V/3.3V Crystal Input to 1:6 LVTTL/LVCMOS Clock Fanout Buffer with OE Description The NB3H83905C is a 1.8 V, 2.5 V or 3.3 V VDD cor

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VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) 30 V ± 20 V 4.1 mΩ 6.3 14 nC i 50 A Applications • Synchro

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