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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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ഀ‫ݾ‬Ԩা CD7388CZ 4u41W ୺к࿛ູٟ৑ׂӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ໻⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ࡯˄᳔໻ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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CD1619CB 1、 CD1619CB 、、。 ： ● ：VCC=3V ，FM：ICCQ=5.3mA；AM：ICCQ=3.4mA（） ● FM/AM ● ：VCC=6V，RL=8Ω，PO=500mW（） ● AFC ● RF AGC、IF AGC ● LED ● ● ：S

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10W 1. CV203CZ 10W 1.6 2. 2.1 ZIP5 CV203CZ B 3.5A 2.2 1 2 3 IN NF GND 4 OUT 5 VCC 14 0510 5807123-5542 14 0510 5803016 3. 3.1 DC 3.3 Tam

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NPN 3DD4520 A4 ○R 3DD4520 A4 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Tc=25℃） 450 2 35 V A W TO-252 -10℃～40℃

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Silicon N-Channel Power MOSFET ○R CS3710 B8 General Description： CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-align

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1. CD7613CP 2. 2. 1 VCC = 3 ~ 13V DIP16 CD7613CP 14 0510 5807123-5542 15 0510 5803016 CD7613CP 2. 2 1 BPSIF 2 INIF 3 GNDPRE 4 OUTMIX 5 OSCAM 6

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NPN 3DD4540 A4 ○R 3DD4540 A4 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot（TC=25℃） 450 4 40 V

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Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integr

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N D92-02 ○R D92-02 N ， ，、 。 ● ● ● ● ● ● （UPS） ● ● ● ● VRRM IF（AV） VF（IF=10A） trr（IF=0.5A） 200 2×10 0.95 25 V A V ns TO-3P（N

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