LDMos Datasheet | Specifications & PDF Download

Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Prelimin

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed

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BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W

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polyfet rf devices LC801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. www.DataSheet4U.com Order this document by MW5IC2030M/D The Wideband IC Line

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PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended f

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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

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polyfet rf devices LX401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for M

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BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extrem

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile t

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MU1504 LDMOS TRANSISTOR Document Number: MU1504 Product Datasheet V3.0 1500MHz, 40W, 28V High Power RF LDMOS FETs Description The MU1504 is a 40-wat

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PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The

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Freescale Semiconductor Technical Data Document Number: A2I20H080N Rev. 0, 3/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H080N wide

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NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device

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