LDMos Datasheet | Specifications & PDF Download

Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

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MX0525 LDMOS TRANSISTOR 250W, 28V High Power RF LDMOS FETs Description The MX0525 is a 250-watt, highly rugged, unmatched LDMOS FET, designed for wide

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PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt

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MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-b

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers

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DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE55

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BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General des

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MXR9745T1/D Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideban

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MX0560VPX LDMOS TRANSISTOR 550W, 50V High Power RF LDMOS FETs Description The MX0560VPX is a 550-watt capable, high performance, unmatched LDMOS FET,

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www.DataSheet4U.com LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIE

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers

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PD55015-E PD55015S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal

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Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideban

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BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General desc

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