.
Toshiba Semiconductor
184
A1013 - 2SA1013
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S.
Toshiba Semiconductor
91
A1837 - 2SA1837
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High trans.
Inchange Semiconductor Company Limited
75
2SA1216 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Li.
Toshiba Semiconductor
53
A1930 - 2SA1930
2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High tr.
Inchange Semiconductor
44
2SA1695 - POWER TRANSISTOR
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -.
Toshiba Semiconductor
40
2SA1020 - PNP Transistor
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • Low Collector saturati.
Silan Microelectronics
39
SA1466 - 5-CH CD PLAYER OPU DRIVER
SA1466 5-CH CD PLAYER OPU DRIVER WITH A TRAY DRIVER AND 2 ADJUSTABLE REGULATORS DESCRIPTION The SA1466 is a five-channel BTL driver IC for driving th.
Inchange Semiconductor
35
2SA1837 - POWER TRANSISTOR
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1837 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·High Curre.
Thinki Semiconductor
30
2SA1943 - 150 Watt Silicon PNP Power Transistors
2SA1943 ® Pb Free Plating Product 2SA1943 Pb 150 Watt Silicon PNP Power Transistors DESCRIPTION ¡¤ With TO-3PL package ¡¤ Complement to type 2SC.
Toshiba Semiconductor
29
A1941 - 2SA1941
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (m.
Inchange Semiconductor
28
2SA1186 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Ty.
Inchange Semiconductor
28
2SA1106 - POWER TRANSISTOR
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear.
Panasonic Semiconductor
28
A1512 - 2SA1512
Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 s Features q Low collector to e.
Toshiba Semiconductor
25
A1048 - 2SA1048
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1048 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High.
Toshiba Semiconductor
24
2SA1015 - Silicon NPN TRANSISTOR
2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica.
ON Semiconductor
24
2SA1020 - One Watt High Current PNP Transistor
2SA1020 One Watt High Current PNP Transistor Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Vo.
Toshiba Semiconductor
21
2SA1013 - Silicon PNP Transistor
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S.
Sanyo Semicon Device
21
A1207 - 2SA1207
www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Ap.
Inchange Semiconductor
21
2SA1102 - POWER TRANSISTOR
isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Minimum Lot-t.
Toshiba Semiconductor
20
2SA1941 - Silicon PNP Transistor
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (m.