MMBT5551 Datasheet | Specifications & PDF Download

MMBT5551T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package.  / Features , MMBT5401T 。

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DATA SHEET www.onsemi.com High Voltage Transistors NPN Silicon MMBT5550L, MMBT5551L Features  S and NSV Prefix for Automotive and Other Application

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High Voltage Transistors NPN Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO

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Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product complian

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MMBT5551W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features , MMBT5401W

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Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT5401) • Ideal for Low Power Amplification and Switching • Lead, H

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SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ideal for medium power amplificat

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Features ■ Ideal for medium power amplification and switching ■ Complementary PNP MMBT5401 Applications ■ General Purpose Amplifier ■ Switching Absol

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Elektronische Bauelemente MMBT5551W NPN Silicon Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .,LTDCollector-Emiller Voltage:VCEO

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Elektronische Bauelemente MMBT5551 0.6A, 180V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead

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MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector

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SMD High Voltage Transistor (NPN) MMBT5550/MMBT5551 SMD High Voltage Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switchin

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MM

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MMBT5551 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 160 Volts POWER 250 mWatts FEATURES • NPN Silicon, planar design • Collector-emitter voltage VCE = 160V •

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is desig

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High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 =

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SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES  Complementary to MMST5401  Small Surface Mount Package  Ideal for Medium Power A

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