| No |
Part Number |
Description |
Manufacture |
PDF |
| 278 |
MTB |
METALLIZED POLYESTER FILM CAPACITORS
METALLIZED POLYESTER FILM CAPACITORS
MTB
MTB
FEATURES
• • •
SERIES
NEW
°
SPECIFICATIONS
° ∼ °
°
δ × µ µ Ω Ω
OUTLINE
PART NUMBER
METALLIZED POLYESTER |
RUBYCON CORPORATION
|
|
| 277 |
MTB-F000329MNHNAA-B |
LCD Module
Messrs. Standard Product Specification Model:
NMTB-F000329MNHNAA-B Rev. No. Issued Date. A July. 20, 11
Page. 1 / 23
LIQUID CRYSTAL DISPLAY MODULE MODEL: MTB-F000329MNHNAA-B Customer’s No.:
Accep |
Microtips
|
|
| 276 |
MTB-F000368MNHNAA |
LCD Module
Messrs. Product Specification Model: MTB-F000368MNHNAA
Rev. No. Issued Date. A Sep.29, 05
Page. 1 / 22
LIQUID CRYSTAL DISPLAY MODULE
MODEL: MTB-F000368MNHNAA Customer’s No.:
Acceptance
Microtip |
Microtips
|
|
| 275 |
MTB001 |
High Output Interface Driver ICs
SHINDENGEN
High Output Interface Driver ICs
MTB Series
MTB001
FEATURES
●Four output driver per package ●TTL/CMOS compatible inputs (Low active)
OUTLINE DIMENSIONS
Case : SIP-16 (Unit : mm)
APPL |
Shindengen Electric
|
|
| 274 |
MTB001D01-1 |
LCD Module
Global LCD Panel Exchange Center
www.panelook.com
MTB001D01-1 Product Specification
MODEL: MTB001D01-1
Ver. 1.1 Date: 15.Nov.2012
Customer’s Approval
CSOT
Signature
Date Approved By Product D |
CSOT
|
|
| 273 |
MTB010N06I3 |
N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C137I3 Issued Date : 2015.05.05 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB010N06I3
BVDSS ID@VGS=10V, TC=25°C
60V 50A
RDS(ON |
CYStech Electronics
|
|
| 272 |
MTB011 |
High Output Interface Driver ICs
SHINDENGEN
High Output Interface Driver ICs
MTB Series
MTB011
FEATURES
●Four output driver per package ●TTL/CMOS compatible inputs (High active)
OUTLINE DIMENSIONS
Case : SIP-16 (Unit : mm)
APP |
Shindengen Electric
|
|
| 271 |
MTB011N10RQ8 |
N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB011N10RQ8
Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 1/9
Features
• Single Drive Requirement • Low |
Cystech Electonics
|
|
| 270 |
MTB012N04J3 |
N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C450J3 Issued Date : 2016.11.11 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB012N04J3 BVDSS
40V
ID@VGS=10V, TC=25°C
40A
RDS(ON |
Cystech Electonics
|
|
| 269 |
MTB012N04Q8 |
N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C450Q8 Issued Date : 2017.01.09 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB012N04Q8
Features
BVDSS ID @ TA=25°C, VGS=10V
RDS(ON |
Cystech Electonics
|
|
| 268 |
MTB012N10RQ8 |
N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB012N10RQ8
Spec. No. : C056Q8 Issued Date : 2016.08.26 Revised Date : 2016.11.08 Page No. : 1/9
Features
Single Drive Requirem |
Cystech Electonics
|
|
| 267 |
MTB013N10RE3 |
N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RE3
Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. : 1/ 8
Features
• Low On Resistance • Simple Dr |
Cystech Electonics
|
|
