PTF Datasheet | Specifications & PDF Download

RELAYS & CONTACTORS OMRON RELAY SOCKETS www.DataSheet4U.com PTF, PF, P2RF SERIES GENERAL SPECIFICATIONS Mounting Rated voltage Rated current Dielectri

(28 views)

KPTF-1616RGBC-11 1.6 x 1.6 mm Full-Color Surface Mount LED DESCRIPTIONS PACKAGE DIMENSIONS  The Hyper Red source color devices are made with AlGa

(24 views)

PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in D

(19 views)

PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

(18 views)

PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended f

(17 views)

PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The

(15 views)

PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for clas

(13 views)

PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internall

(13 views)

PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET su

(13 views)

PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U

(12 views)

PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The

(12 views)

PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description Th

(12 views)

PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-w

(12 views)

PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz Description The PTFB091802FC LDMOS FET is designed for use in pow

(12 views)

Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky bar

(11 views)

PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-

(11 views)

PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDM

(11 views)

PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for

(11 views)

PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTF

(11 views)

PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description Th

(11 views)