PTF Datasheet | Specifications & PDF Download

PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

Rating: 1 ★ (8 votes)

PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internall

Rating: 1 ★ (5 votes)

PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in D

Rating: 1 ★ (4 votes)

PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U

Rating: 1 ★ (4 votes)

PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LD

Rating: 1 ★ (4 votes)

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The

Rating: 1 ★ (4 votes)

PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally

Rating: 1 ★ (4 votes)

PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for clas

Rating: 1 ★ (3 votes)

PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

Rating: 1 ★ (3 votes)

PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in mu

Rating: 1 ★ (3 votes)

PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are therm

Rating: 1 ★ (3 votes)

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E

Rating: 1 ★ (3 votes)

PTF 10045 30 Watts, 1.60–1.65 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10045 is a common source N-channel enhancement-mode lateral MOS

Rating: 1 ★ (3 votes)

PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10122 is an internally matched common source N-channel enha

Rating: 1 ★ (3 votes)

PTF 102027 40 Watts, 925–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications

Rating: 1 ★ (3 votes)

Rating: 1 ★ (3 votes)

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for

Rating: 1 ★ (3 votes)

PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff

Rating: 1 ★ (3 votes)

PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340‑watt LDMOS FET intended fo

Rating: 1 ★ (3 votes)

PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz Description The PTFC270051M is an unmatched 5-watt LDMOS FET suita

Rating: 1 ★ (3 votes)