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2SD1760 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD18 |
 ROHM Electronics |
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128 x 64 Dot Matrix OLED/PLED Segment/Common Driver ..................................................................................................................................6 ORDERING INFORMATION ................................................................................................. |
 Solomon Systech |
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8-20 seconds voice recorder di.net Free Datasheet http://www.nDatasheet.com ISD1820 8-20 IC 、 REC ，RECLED ，。： ， PE ，，； ， PL ，； ，， PE ，。 ，，，， ， AGC ，， 。 、 ： ： 220UF RECLED （） ， RECLED ，，，。 、 ： ， LM386、D2823、D2822、TA7368、MC34119 。 SP+ SP- ，SP＋ SP－，。 LM386 ： 2 AMBITIO |
 AMBITION |
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NPN Transistor ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The |
 STMicroelectronics |
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2SD1351 mitter cut-off current CONDITIONS IC=50mA; IB=0 IC=2A; IB=0.2A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IE=0; VCB=10V,f=1MHz IC=0.5A ; VCE=5V 60 35 3.0 MIN 60 0.25 0.7 TYP. SYMBOL VCEO VCEsat VBE ICBO IEBO 2SD1351 MAX UNIT V 1 |
 JMnic |
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2SD1879 · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
 Sanyo Semiconductor Corporation |
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2SD1402 breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=80 |
 SavantIC |
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2SD1266 q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Paramet |
 Panasonic Semiconductor |
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2SD1207 · Power supplies, relay drivers, lamp drivers, and automotive wiring. www.DataSheet4U.com Package Dimensions unit:mm 2006A [2SB892/2SD1207] Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current ca |
 Sanyo Semiconductor |
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2SD1273 q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 2 150 –55 to +150 Unit V 7.5 |
Panasonic Semiconductor |
| Total 4010 results |
