SF-2012 Datasheet | Specifications & PDF Download

R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

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R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

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N-Channel Enhancement Mode Power MOSFET Description The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It ca

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PE2012 N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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Dual N-Channel Enhancement Mode Power MOSFET MX2012E DESCRIPTION The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low ga

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http://www.ncepower.com Pb Free Product NCE60NP2012K NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench te

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ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (W) 12 20 VG

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http://www.ncepower.com Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology

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20V N-Channel Enhancement Mode MOSFET NP2012 Description Schematic diagram The NP2012 uses advanced trench technology to provide excellent RDS(ON)

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R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

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www.DataSheet4U.com 2012 Size 806-928MHz Band Chip Multilayer RF Transformer Impedance Ratio 50:200 FSLT-S087G All the technical data and informati

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www.DataSheet4U.com 2012 Size Chip Multilayer RF Transformer FSLT-S009T[ ]-[ ] All the technical data and information contained herein are subject

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GOFORD G2012 N-Channel Enhancement Mode Power MOSFET Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate

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WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.910@ VGS=-1.8V Descriptions

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Ordering number:ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed swi

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R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

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RU20120L N-Channel Advanced Power MOSFET Features • 20V/120A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V • Super High Dense Cell De

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DS2012SF DS2012SF Rectifier Diode Replaces September 2001 version, DS4191-4.0 DS4548 -4.1 December 2001 FEATURES s Double Side Cooling s High Surge

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