SF-2012 Datasheet | Specifications & PDF Download

WNSC2M20120R-A N-Channel Silicon Carbide MOSFET Rev.01 - 13 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO24

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WNSC2M20120TB N-Channel Silicon Carbide MOSFET Rev.01 - 18 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TSPAK

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WNSC2M20120B7-A N-Channel Silicon Carbide MOSFET Rev.01 - 11 October 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO26

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N-Channel Enhancement Mode Power MOSFET Description The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It ca

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E4D20120D 1200 V, 20 A Silicon Carbide Schottky Diode Features • 4th generation SiC merged PIN schottky technology • Zero reverse recovery current •

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RU20120L N-Channel Advanced Power MOSFET Features • 20V/120A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V • Super High Dense Cell De

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GOFORD G2012 N-Channel Enhancement Mode Power MOSFET Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate

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Ordering number:ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed swi

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R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

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http://www.ncepower.com Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology

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Features • TrenchFET Power MOSFET • Epoxy meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) •

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N-Channel Enhancement Mode Power MOSFET Description The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope

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www.vishay.com WSF Vishay Dale Metal Film Resistors, Power, Surface Mount Note * This datasheet provides information about parts that are RoHS-co

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20V N-Channel Enhancement Mode MOSFET NP2012 Description Schematic diagram The NP2012 uses advanced trench technology to provide excellent RDS(ON)

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http://www.ncepower.com Pb Free Product NCE60NP2012K NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench te

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POWER TRANSFORMERS Split Bobbin Horizontal PC Mount u 2500 VRMS hipot/ Class B 130°C Insulation u Single 115VAC or dual 115/230VAC primaries u Single

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FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enab

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POWER TRANSFORMERS Split Bobbin Horizontal PC Mount u 2500 VRMS hipot/ Class B 130°C Insulation u Single 115VAC or dual 115/230VAC primaries u Single

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R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

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