SF-2012 Datasheet | Specifications & PDF Download

GOFORD G2012 N-Channel Enhancement Mode Power MOSFET Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate

Rating: 1 ★ (6 votes)

http://www.ncepower.com Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology

Rating: 1 ★ (5 votes)

N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It ca

Rating: 1 ★ (5 votes)

http://www.ncepower.com Pb Free Product NCE60NP2012K NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench te

Rating: 1 ★ (4 votes)

POWER TRANSFORMERS Split Bobbin Horizontal PC Mount u 2500 VRMS hipot/ Class B 130°C Insulation u Single 115VAC or dual 115/230VAC primaries u Single

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

SPICE MODEL: DMP2012SN DMP2012SN P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Low On-Resistance Low Gate

Rating: 1 ★ (4 votes)

Ordering number:ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed swi

Rating: 1 ★ (4 votes)

2.0x1.25mm INFRARED EMITTING DIODE Part Number: KP-2012SF4C Features z 2.0mmx1.25mm SMT LED,1.1mm thickness. z Mechanically and spectrally matched to

Rating: 1 ★ (4 votes)

www.vishay.com PSF Vishay Dale Metal Film Resistors, High Precision, High Stability, Surface Mount FEATURES • Extremely low temperature coefficient

Rating: 1 ★ (4 votes)

RU20120L N-Channel Advanced Power MOSFET Features • 20V/120A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V • Super High Dense Cell De

Rating: 1 ★ (4 votes)

Elektronische Bauelemente SMS2012-C 6A, 20V, RDS(ON) 26mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halog

Rating: 1 ★ (4 votes)

FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enab

Rating: 1 ★ (3 votes)

POWER TRANSFORMERS Split Bobbin Horizontal PC Mount u 2500 VRMS hipot/ Class B 130°C Insulation u Single 115VAC or dual 115/230VAC primaries u Single

Rating: 1 ★ (3 votes)

PE2012 N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge

Rating: 1 ★ (3 votes)

Ordering number:ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed swi

Rating: 1 ★ (3 votes)

www.DataSheet4U.com 2012 Size Chip Multilayer RF Transformer FSLT-S009T[ ]-[ ] All the technical data and information contained herein are subject

Rating: 1 ★ (3 votes)

www.DataSheet4U.com 2012 Size 806-928MHz Band Chip Multilayer RF Transformer Impedance Ratio 50:200 FSLT-S087G All the technical data and informati

Rating: 1 ★ (3 votes)

R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

Rating: 1 ★ (3 votes)

Features ‡ 7UHQFK)(73RZHU026)(7 ‡ (SR[\PHHWV8/ 9 )ODPPDELOLW\5DWLQJ ‡ 0RLVWXUH6HQVLWLYLW\/HYHO ‡ +DORJHQ)UHH$YDLODEOH8SRQ5HTXHVW%\

Rating: 1 ★ (3 votes)