SK22-G Datasheet | Specifications & PDF Download

Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features · Ultrahigh withstand voltage (VGDS≥–80V). ·

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2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • L

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SILICON N CHANNEL JUNCTION TYPE 3SK22 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. FEATURES • High Power Gain : Gps =20dB (Typ. ) (f=100M

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2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • • • • • High breakdown voltage (VDSS =

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2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed s

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isc N-Channel MOSFET Transistor 2SK2223-01 DESCRIPTION ·Drain Current ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed

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WSK220N04 N-Ch MOSFET General Description Product Summery The WSK220N04 is the highest performance trench N-Ch MOSFET with extreme high cell densit

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2SK2231 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2231 Chopper Regulator, DC−DC Converter and Motor Drive Application

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Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Lar

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2SK2201 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV) 2SK2201 Chopper Regulator, DC/DC Converter and Motor Drive Application

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2SK2208 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±5 ± 20 75 (Tc = 25ºC) 400 5 150 –55 to +1

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H

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2SK2272-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

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