SANGDEST MICROELECTRONICS Technical Data Data Shee.
WON-TOP
SK22 - 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS SK22 – S210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features Low Forward Voltage Epitaxial Construction with Oxide .
GOOD ELECTRONIC
SK2200C - SCHOTTKY BARRIER RECTIFIER
0.126(3.20) 0.114(2.90) 0.103(2.62) 0.079(2.06) 0.060(1.52) 0.030(0.76) SK22C THRU SK2200C SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Vo.
Hitachi Semiconductor
2SK2202 - Silicon N-Channel MOS FET
2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd. Edition Application High speed power switching Features • • • • • Low on-resistance High speed.
Sanken electric
2SK2207 - MOSFET
2SK2207 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±3 ± 12 35 (Tc = 25ºC) 280 3 150 –55 to +1.
Panasonic Semiconductor
2SK2211 - Silicon N-Channel MOS FET
Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 • Low ON-resistance RDS.
Hitachi Semiconductor
2SK2216 - Silicon N-Channel MOS FET
2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficienc.
Hitachi Semiconductor
2SK2221 - Silicon N-Channel MOSFET
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H.
Fuji Electric
2SK2224-01R - N-channel MOS-FET
2SK2224-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
Sanyo Semicon Device
2SK223 - N-Channel Junction Silicon FET
Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features · Ultrahigh withstand voltage (VGDS≥–80V). · .
CITC
SK220A - 2A Surface Mount Schottky Barrier Rectifiers
SK22A THRU SK220A 2A Surface Mount Schottky Barrier Rectifiers ■ Features • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK22A.
Toshiba Semiconductor
K2237 - 2SK2237
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Hitachi Semiconductor
K2221 - 2SK2221
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
Mitsubishi
AA121SK22 - SVGA
Global LCD Panel Exchange Center www.panelook.com PRELIMINARY ECR # REV. HIST. A DESCRIPTION First release APPROVED Allen Houck DATE 11/28/01 .
KD
SK22 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SK22 THRU SK210 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic packag.
MCC
SK220-L - 2 Amp Schottky Rectifier
MCC TM Micro Commercial Components Features omponents 20736 Marilla Street Chatsworth # $ % .
MCC
SK22-L - 2 Amp Schottky Rectifier
MCC TM Micro Commercial Components Features omponents 20736 Marilla Street Chatsworth # $ % .
Toshiba Semiconductor
2SK2201 - Silicon N-Channel MOS Type Field Effect Transistor
2SK2201 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV) 2SK2201 Chopper Regulator, DC/DC Converter and Motor Drive Application.
Hitachi Semiconductor
2SK2203 - Silicon N-Channel MOS FET
2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed s.
Sanken electric
2SK2208 - MOSFET
2SK2208 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±5 ± 20 75 (Tc = 25ºC) 400 5 150 –55 to +1.
