SK22-G Datasheet | Specifications & PDF Download

2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • L

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WSK220N04 N-Ch MOSFET General Description Product Summery The WSK220N04 is the highest performance trench N-Ch MOSFET with extreme high cell densit

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SILICON N CHANNEL JUNCTION TYPE 3SK22 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. FEATURES • High Power Gain : Gps =20dB (Typ. ) (f=100M

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2275 is N-cha

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2SK2226-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel

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Ordering number:ENN4753 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2260 Ultrahigh-Sp

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2SK2292-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features · Ultrahigh withstand voltage (VGDS≥–80V). ·

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2SK2200 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2200 Chopper Regulator, DC−DC Converter and Motor Drive Application

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SK225xD Series Agency Recognitions Agency Agency File Number E71639 Main Features Symbol IT(RMS) VDRM/ VRRM IGT Value 25 1200 40 Unit A V mA Thy

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2258 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Ea

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® WON-TOP ELECTRONICS SK2150 – SK2200 2.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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2SK2212 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK2213-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H

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2SK2223-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

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2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • • • • • High breakdown voltage (VDSS =

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2SK2229 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2229 Chopper Regulator, DC−DC Converter and Motor Drive Application

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