SS35 Datasheet | Specifications & PDF Download

NotNeRewcDoemsimgennsded for 1SS356 Band Switching Diodes 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 35 V Ct 1.2 pF rF 0.9 Ω 　 ●F

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RoHS 1SS355 1SS355 FAST SWITCHING DIODES TDFEATURES SOD-323 + - O.,LMARKING: A CMaximum Ratings and Electrical Characteristics, Single Diode @TA=2

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Silicon Epitaxial Planar Diode FEATURES z Small package z Low forward voltage z Fast reverse recovery time z Small total capacitance Pb Lead-free P

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small pac

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Ordering number :EN3240B 1SS351 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Series connection of 2 element

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SURFACE MOUNT FAST SWITCHING DIODE 1SS355 REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES • Fast switching speed • Low reverse leak

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www.DataSheet4U.com ISSUED DATE :2004/09/20 REVISED DATE : GD1SS355 Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 9

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Silicon Epitaxial Planar Diode FEATURES  Small Surface Mounting Type: SOD-323  High Speed switching.  High Reliability. Pb Lead-free Production

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1SS357 SCHOTTKY DIODE FEATURES * Small Package * Low VF ,low IR MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead

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-,$1*68 &+$1*-,$1* (/(&7521,&6 7(&+12/2*< &2 /7' 62'   3ODVWLF (QFDSVXODWH 'LRGHV 1SS357 Schottky Barrier Diode )($785(6 z Low current rectifier

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1SS352 Silicon Epitaxial Planar Switching Diode Features • Low forward voltage • Fast Reverse Recovery Time • Small Total Capacitance Application • Ul

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www.DataSheet4U.com NSS35200CF8T1G 35 V, 7 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are mini

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SS3503 Linear Hall Effect Sensor Features Miniature construction Low-Noise Output 4.5 V to 6 V Operation Magnetically Optimized Package Linear output

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LESHAN RADIO COMPANY, LTD. Switching diode .Applications High speed switching .Features 1) Small surface mounting type. 2) High Speed.(trr =1.2ns Ty

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1SS355-AU SURFACE MOUNT SWITCHING DIODE VOLTAGE 90 Volt POWER 200 mW FEATURES • Small surgace mounting type (SOD-323) • High Speed (TRR=1.2ns Typ

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1SS355VM Switching Diode (High speed switching) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 90 V IFM 225 mA Io 100 mA IFSM 500 mA

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DSS3515M 15V PNP LOW SATURATION TRANSISTOR IN X1-DFN1006-3 Features  BVCEO > -15V  IC = -500mA High Collector Current  ICM = -1A Peak Pulse Curren

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DSS3540M Features  BVCEO > -40V  IC = -500mA High Collector Current  ICM = -1A Peak Pulse Current  PD = 1000mW Power Dissipation  Low Collector-

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 1SS352 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package  L

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