Zetex Datasheet | Specifications & PDF Download

Package information - SOT23-6 Surface mounted, 6 pin package Package outline DIM A A1 A2 b C D E E1 L e e1 L Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20

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Package information - MSOP8 Surface mounted, 8 pin package Package outline ec E E1 D A2 A R1 L R b A1 DIM Millimeters Inches Min. Max. Min.

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 1995 FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps

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Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (Ω) 0.200 @ VGS= 4.5

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www.DataSheet4U.com ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On

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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Wa

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www.DataSheet4U.com ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packa

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www.DataSheet4U.net ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; I

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FET BIAS CONTROLLER DRAFT ISSUE A - DECEMBER 2000 DEVICE DESCRIPTION The ZNBR series of devices are designed to meet the bias requirements of GaAs and

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ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC(cont) = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 2 – NOV 93 www.DataSheet4U.com MPSA12P E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt BCX38A/B/

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SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT749 C1 C1 C2 C2 PARTMARKING DETAIL – T749 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOL

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PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 4 – JUNE 94 * * * * * 4 Amps continuous current Up to 15 Amps peak current Very low satu

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ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135⍀; ID=2.3A DESCRIPTION This new generation of high density M

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ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 o

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www.DataSheet4U.com Package information - SOT23-5 Surface mounted, 5 pin package Package outline DIM A A1 A2 b C D E E1 e e1 L a° Min. 0.90 0.00 0.9

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 – JUNE 94 FEATURES * 160 Volt VCEO * 1 Amp continuous current * Gain of 5K at IC=1 Amp

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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Wat

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ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A DESCRIPTION This new generation of high cell

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